The pn Junction under Reverse Bias Condition

1. The pn junction is excited by a constant current source I in the reverse direction. To ignore breakdown, I kept minor than I_S.
2. Note down that the depletion layer widens and the barrier voltage increases by VR volts, which appears among the terminals as reverse voltage.
3. The current I will be carried by electrons passing in the external circuit from   the n material to p material (explicitly, in direction opposite to  that of I).
4. It will cause holes to leave p material & electrons to leave the n material . Therefore reverse current I will result in an enhanced in the width of, and the charge hold in the depletion layer. This will enhance the voltage across depletion region?