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Q. An n-channel JFET with A = 300 V, P = 2 V, and I DSS = 10 mA is to be operated in the active mode. Determine i D when v DS = 10 V and v GS =-0.5V.
a) What do you mean by assembly procedures in FEM, discuss by taking suitable example of your choice. b) Write the potential energy equation for particular FE analysis of a prob
ON output plot of a JFET n-channel transistor if ID is close to IDSS does the value of VGS close to VP?
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