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Q. What is thermal runaway.
The problem of self heating arises due to dissipation of power at the collector junction. The leakage current ICBO is extremely temperature dependent and increase with the rise of temperature of collector base junction. An increase in ICBO causes an increase in collector current IC considerabely. With the increase in collector current ,collector power dissipation increase which raises the junction temperature which leads to further increase in collector current. The process is cumulative and may lead to the eventual destruction of the transistor . This phenomenon is called thermal runaway.
Simulation of a pn Junction An n + p junction is fabricated on a p-type silicon substrate with N A = 8×10 15 cm -3 . The n+ region has a concentration of N D = 1.5×10 18
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