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Q. What is thermal runaway.
The problem of self heating arises due to dissipation of power at the collector junction. The leakage current ICBO is extremely temperature dependent and increase with the rise of temperature of collector base junction. An increase in ICBO causes an increase in collector current IC considerabely. With the increase in collector current ,collector power dissipation increase which raises the junction temperature which leads to further increase in collector current. The process is cumulative and may lead to the eventual destruction of the transistor . This phenomenon is called thermal runaway.
Draw the memory map of TPA in a personal computer and explain different areas. The transient program area holds the DOS operating system and other programs which control the co
In this case, 24 simultaneous calls can be put through switch. Generally a 24-outlet Uni-selector is used as a selector hunter. Every one of the 24 outlets is connected to one two-
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Structure of Bipolar junction transistor: A BJT contains three differently doped semiconductor regions that are: emitter region, base region and collector region. These regio
A keyboard shortcut for a command. For example, Ctrl + Alt + Delete are an accelerator key for the task manager in Windows 95.
Q. What the major advantages FET transistors over BJT transistors? a. BJT transistor (bipolar junction transistor) is a bipolar device - the prefix bi-revealing that the conduc
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INS Increment Register Pair Instruction Contents of the registers pair R P will be incremented by one and the result will be stored in the same register pair. It is
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