What is meant by thermal runaway, Electrical Engineering

Assignment Help:

Q. What is meant by Thermal Runaway? Explain with reference to a transistor.How is it avoided in circuits?

The collector current of a transistor increases with increasing temperature.The characteristics of a transistor are thus temperature dependent.At high temperatures(150-200 degree Celsius),the semiconductor material degenerates and hence their performance is unpredictable.The following characteristics of transistor are temperature dependent:emitter junction resistance,beta,base-emitter voltage and leakage current.

The leakage current,an important transistor parameter,increases exponentially with temperarture and can set a limit to the operating temperature of a transistor.Increasing leakage current results in increasing collector current,and also increasing collector junction temperature,with a still further increase in leakage current.Thus a vicious cycle is set up,which if not kept under check,will result in the transistor being permanently damaged.It is referred to as'Thermal Runaway'.

Even in absence of emitter current,a minute collector current flows through the transistor.Denoted by Icbo,this current represents the current between collector and base with an open emitter.Icbo doubles for every 10 degree Celsius rise in temperature.At room temperature,the leakage current in silicon transistors is far less than that in germanium transistors.It is part of the total collector current and is also unpredictable.An increase in leakage current brings about a corresponding increase in the collector current,resulting in a shift of the operating point.Special biasing techniques keep the shift in the operating point stabilized.

Even in the absence of base current,a minute current flows through the collector of a transistor.Denoted by Iceo,this current represents the current between collector and emitter with an open base.Iceo is also temperature dependent.Special biasing techniques are employed to swamp the changes in Iceo.

T = Tj - Ta= θPd.

where,

T = temperature rise in collector junction.

Tj= junction temperature.

Ta= ambient temperature.

Theta = constant of proportionality called thermal resistance which depends on size of transistor.


Related Discussions:- What is meant by thermal runaway

Determine the atomic weight of an atom, Atomic weight of an atom is (A...

Atomic weight of an atom is (A) Sum of the number of protons and neutrons. (B) Sum of the number of protons and electrons. (C) Sum of the number of electrons and n

Disadvantages of software defined radio, Disadvantages of SDR 1. Power ...

Disadvantages of SDR 1. Power consumption is more due to rapid switching of modes 2. Hardware design is not easy 3. Software bugs exist in the system

logical and with accumulator instruction , ANA  Logical AND with Accumula...

ANA  Logical AND with Accumulator Instruction This  instruction is used to logically AND the accumulator  of any register or memory location  with the  accumulator and the r

Turn off time - thyristor, Turn off Time This is also known  as gate...

Turn off Time This is also known  as gate controlled  turn on  time. The time  interval between  a specified  point at the beginning  of the  gate pulse  and the  instant wh

Compute the efficiency of the autotransformer, The single-phase, 50-kVA, 24...

The single-phase, 50-kVA, 2400:240-V, 60-Hz, two-winding distribution transformer is connected as a step-up autotransformer, as shown in Figure. Assume that the 240-V winding is pr

Explain biased and double clipper circuits, Q. Explain biased and double c...

Q. Explain biased and double clipper circuits.   Clipper can be either forward biased or reverse biased. If a battery is connected in series with the diode in a positi

Gis applications, Gis Applications So far, you have learnt how GIS can...

Gis Applications So far, you have learnt how GIS can help utilities to obtain snapshots of the locations of substations, lines and cables in relation to their geographical bea

A, A microstrip antenna system operating at 915MHz must be designed using R...

A microstrip antenna system operating at 915MHz must be designed using Rogers RO3010 substrate with the thickness of 0.635mm.

Define electrical energy, Electrical energy If the power is measured in...

Electrical energy If the power is measured in watts and the time in seconds then the unit of energy is watt- seconds or Joules.

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd