Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Voltage divider bias:
The voltage divider is made by using external resistors R1 and R2. The voltage beyond than R2 forward biases the emitter junction. Via proper selection of resistors R1 and R2, the operating point of the transistor can be prepared independent of β. In this type of circuit, the voltage divider holds the base voltage fixed independent of base current given by the divider current is large as compared to the base current. Though, even with a fixed base voltage, collector current changes with temperature thus an emitter resistor is added to stabilize the Q-point, identical to the above circuits with emitter resistor.
In this circuit the base voltage is provided by:
VB = voltage across R2
= Vcc (R2) / (R1+R2) - IB (R1R2) / (R1+R2)
≈ Vcc (R2) / (R1+R2) provided IB << I2 = VB /R2
Also
VB = Vbe + IERE
For the given circuit,
Buck Boost Converter The output of buck boost regulator may be less than or greater than the input voltage. Since the polarity of output voltage is opposite to that
Tri State Devices Tri State devices have three states logic 1 logic 0 and high impedance. A tri state device ( Buffer/ Inverter) has three lines output enable as shown
Can add vectors using the parallelogram rule Can multiply a vector by a scalar - result is a parallel vector • length is scaled
Working and block diagram
Given the frequency-domain response of an RL circuit to be determine the initial value and the final value of the current by using the initial-value and final-value theorem
Q. Explain state-variable techniques? The matrix formulations associated with state-variable techniques have largely replaced the block-diagram formulations. Computer software
Third Generation ( 1964- 1982 ) Invention of technology of integrated circuits created computers of third generation. In several logical gates are fabricated on a singl
Calculate the approximate donor binding energy Calculate the approximate donor binding energy for Si (r = 11.7,m x n = 1.18 m 0 ) Solution: From E= m * n q 4 / 2(4 πε 0
Q. The voltage at terminal a relative to terminal b of an electric component is v(t) = 20 cos 120πt V. A current i(t) =-4 sin 120πt A ?ows into terminal a. From time t 1 to t 2 ,
have 18 multiple choice questions i need answered by 9am cst and will pay Need ASAP
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd