Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
V-I Characteristics
In the normal mode of operation of an IGBT a positive voltage is applied to the collector relative to emitter. When the gate is at zero potential with respect to E no collector current IC flows for collector voltage VCE below the breakdown level VB. When VC < VB and the gate voltage exceeds the threshold value VGT, electrons pass into the N- region ( base of the P-N-p transistor).
Figure V- I characteristics of IGBT
These electrons lower the potential of the N region biasing the P+ - N_ junction thereby causing holes to be injected from the P+ substrate into the N_ epi-layer region. The excess electrons and holes modulate the conductivity N+ region which dramatically reduces the on resistance of the device. With zero gate bins the forward characteristic of IGBT shows very low current (<1bA) where it breaks up sharply to much larger current levels with only a slight increase in voltage. The VI characteristics of IGBT is shown in figure it show the relation between collector current tc and collector to emitter voltage VCE for different values of gate to emitter voltage VGE.
The junction J1 blocks reverse voltage. An IGBT without N+ buffer layer has higher reverse blocking capability. Therefore an IGBT required for blocking high reverse voltage does not have N+ buffer layer. The reverse blocking voltage is shown as the VRM on the VI characteristics. The junction J2 blocks the forward voltage when the IGBT is off.
Determine the response of a series R-C circuit to a SQUARE wave. Explain how the time constant affects the waveform observed across the components. Illustrate your answer by means
Explain Soft ferrites and their applications. Soft ferrites and their applications: Such are non- metallic compounds having ferric oxide and one or two bivalent metal oxides as
Q. Based on the 8421 BCD code for decimal digits 0 through 9, develop a block diagram for a BCD encoder and its implementation scheme.
Q. Explain from the drain characteristics that a JFET has infinite resistance? When V GS = 0v when a positive voltage Vds has been applied across the channel and the gate
a. The antenna current of an AM broadcast transmitter, modulated to depth of 40% by an audio sine wave is 11 amp. It enhances to 12 amp as a result of simultaneous modulation by an
a 4 bit synchronous counter uses flip flops with propagation delay times of 15ns each. what will be the maximum possible time requires for change of state?
The system diagram for the proposed unit is shown below. The system operates on the principle of Time to Rate Conversion. Signals from the heart beat sensor are amplified
Explain the delay model based on logical effort often used in estimating delays in logic cells. Hence use the model to predict the delay of a 4-input NOR logic cell with a 3 times
Construction - UniJunction Transistor: Construction: The basic structure of uni junction transistor is shown in fig. (a). It essentially consists of a lightly doped N type s
i have an assignment due for submission within two days. It is all about transformer measurement manually and numerical results using Matlab.Is there anyone can do the job?
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd