V-i characteristics - power semiconductor devices , Electrical Engineering

Assignment Help:

V-I Characteristics

 In the  normal  mode of  operation of an IGBT  a positive  voltage is applied to the collector relative to emitter. When  the gate is at zero potential with  respect to E no  collector current IC flows  for collector voltage VCE below the  breakdown level  VB. When VC < VB  and the gate voltage exceeds the threshold  value VGT, electrons  pass into the N- region ( base  of the P-N-p transistor).

1742_V-I Characteristics.PNG

                                                                        Figure V- I characteristics of IGBT

These electrons  lower the  potential of the N region  biasing the P+ - N_  junction thereby causing holes to be injected from  the P+  substrate into the N_ epi-layer region. The excess electrons and holes modulate the conductivity  N+ region which dramatically reduces the  on resistance of the device. With  zero gate  bins the forward characteristic  of  IGBT  shows  very low current (<1bA)  where it breaks up sharply to much larger current levels with only a slight  increase in voltage. The Vcharacteristics of IGBT  is shown  in figure  it show the relation  between  collector current  tc and collector to emitter voltage VCE  for different values of gate to  emitter  voltage VGE.

The junction J1 blocks reverse voltage. An IGBT  without  N+ buffer layer  has higher  reverse blocking  capability. Therefore  an IGBT  required  for blocking  high  reverse voltage  does not  have N+  buffer layer. The  reverse blocking voltage  is shown  as the VRM on the VI  characteristics. The junction J2 blocks the forward  voltage when the IGBT is off.

 

 


Related Discussions:- V-i characteristics - power semiconductor devices

Give the properties of pvc, Give the properties of PVC. PVC- It is acqu...

Give the properties of PVC. PVC- It is acquired from polymerisation of hydrogen chloride and acetylene in the presence of a catalyst as peroxides at about 50 0 C. Properties

Find the induced emf across the coil, Q. A coil is formed by connecting 15 ...

Q. A coil is formed by connecting 15 conducting loops, or turns, in series. Each loop has length l = 2.5 m and width w = 10 cm. The 15-turn coil is rotated at a constant speed of 3

Computer-aided circuit analysis using MATLAB, Q. Computer-aided circuit ana...

Q. Computer-aided circuit analysis using MATLAB ? This text does not teach MATLAB; it assumes that the student is familiar with it through previous work. Also, the book does no

Compare dispersion effects single mode and multimode fibre, Compare dispers...

Compare dispersion effects in single mode and multimode fibres? The optical fibres were categorized within two according to the number of modes it passes as: • Single mode fibre

Determine efficiency and form factor, Q Consider a three-phase, full-wave b...

Q Consider a three-phase, full-wave bridge recti?er, as shown in Figure, with a purely resistive load R. For each diode, determine: (i) efficiency, (ii) form factor, (iii) ripple f

Explain and draw hysteresis loop for soft magnetic material, Draw the hyste...

Draw the hysteresis loop for a soft magnetic material and compare it with the hysteresis loop of hard magnetic material. Give two examples of each. Soft and hard magnetic mate

Explain a tube well, Q. Explain a Tube Well? Method of restoring or inc...

Q. Explain a Tube Well? Method of restoring or increasing the capacity of tube well is known as developing a Tube Wells. This is done to eliminate bridging of fine particles on

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd