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Metal Oxide Field Effect Transistor The metal-oxide-semiconductor field-effect transistor (MOSFET/MOS-FET/MOS FET) is a device employed for amplifying or for switching electr
A series RLC circuit consisting of resistor of 200 ohms, an inductor of 0.214H and a capacitor of unknown value. When this circuit is energized by 240 i) value of capacitor ii) vol
Define the general purpose embedded system. a. General purpose microprocessor For illustration, Intel 80x86, Motorola 68HCxxx or Sparc b. Embedded general purpose process
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Direct and Indirect Semiconductors 1) In a common quantitative calculation of band structures, the wave function of a single electron traveling by a perfectly periodic lattice
Q. A silicon diode is forward-biased with V = 0.5 V at a temperature of 293 K. If the diode current is 10 mA, calculate the saturation current of the diode.
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Differentiate between dual beam and dual trace oscilloscope
Common-base configuration: The common-base that is abbreviated as CB transistor configuration, which is as well termed as the 'grounded base' configuration, is displayed in
transformer voltage induced in armatur of ac commentator machin in case tha field flux in sinosoidal?..
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