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Switching Characteristics
The switching characteristic of an IGBT during turn on and turn off time all shown in the sum of delay time and rise time gives the total turn on time here delay time is the time during which collector to emitter voltage falls 10% it means from VCE to 90% of VCE where VCE= initial collector emitter voltage. The rise time is the time during which collector current from it initial leakage current ( ICE) to 10% of IC where IC =final of collector current therefore,
Ton = T J + tr
The on state forward voltage drop across the device is also shown in figure as VCES. The turn off time of IGBT can be divide into there intervals delay time Ido initial and final fall time therefore total turn off times
Toff = t do + T if + tff
The delay time during turn off defined as a time during which the gate voltage falls from VGE to threshold voltage VGE. Due to this collector current falls from IC to 90% of IC. At the end of this delay time VCE being to rise. During initial fall time tif collector current falls forms 90% to 20% of initial value of IC and VCE rises from on state forward drop to 10% of VCE,. During final fall time trf collector current falls from 20% to 10% of initial of IC and VCE rises from 1% of VCE final value of VCE
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