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State about the Embedded Web Technology
Embedded Web Technology (EWT)
This is a new technology which uses the Internet in real time to interact/control with a device which contains an embedded system/microprocessor. User needs to be authorised to do this and can control a device anywhere using a web browser (for example from a computer or even a mobile phone that is web-enabled).
Discuss in detail the several energy resources and their availability. How does a Rankine cycle differ from a modified Rankine cycle? Write down the mathematical expression of m
Q. If the output signal fromanAMmodulator is given by u(t) = 5 cos 1800 πt + 20 cos 2000 πt + 5 cos 2200 πt , determine: (a) The modulating signal m(t) and carrier c(t). (b)
SID Input Serial input data single bit can be accepted through this pin using RIM command discussed in details in chapter8.
Change in an organisation: Change might be perceived in two ways: Change as continuous and intrinsic to an organisation and change as discontinuous & extrinsic. A force
In this case, 24 simultaneous calls can be put through switch. Generally a 24-outlet Uni-selector is used as a selector hunter. Every one of the 24 outlets is connected to one two-
Q. Two coupled synchronous machines are used as a motor-generator set to link a 25-Hz system to a 60-Hz system. Find the three highest speeds at which this linkage would be possibl
Peak inverse Voltage Peak inverse voltage is important parameter in the design of rectifier circuit. PIV is the maximum voltage that appears across the device during its
A three-phase transposed line is composed of one ACSR conductor per phase with flat horizontal spacing of 11 meters as shown in Figure (a). The conductors have a diameter of 3.625
Q Acharge of 0.1Cpasses through an electric source of 6 V from its negative to its positive terminals. Find the change in energy received by the charge. Comment onwhether the charg
Q. Given that a silicon n-channel JFET has V P = 5 V and I DSS = 12 mA, check whether the device is operating in the ohmic or active region when v GS =-3.2 V and i D = 0.5 mA.
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