Spread time - power semiconductor devices , Electrical Engineering

Assignment Help:

Spread Time (ts)

During  spread time anode  voltage  falls from 10% Ia  to the  on state  voltage  drop  and anode  current  rises  from 90% Ia  to final  value  of anode  current i ,e Ia in this period whole  charges injected from   gate spreads over the entire section of  cathode and anode  current  reaches at steady state  condition.

There the total turn on time  ( ton ) can be written  as

Ton = td + Ir + ts

In these  intervals td tr and ts the rise time is high  a s compared to other. If  rise time it  is reduced beyond  a limit thyrisotr may get destroyed because rate of  rise  of anode  current  may be  large  as compared to the spread velocity of charges and this  may forms a  local  hot spot on the cathode surface of SCR. Turn on  time depends on gate  current. It can be  reduced by using  higher  value of gate  currents.

 


Related Discussions:- Spread time - power semiconductor devices

Compute the source current, Q. A 230-V, single-phase, 60-Hz source supplies...

Q. A 230-V, single-phase, 60-Hz source supplies two loads in parallel. One draws 10 kVA at a lagging power factor of 0.80 and the other draws 6 kWat a lagging power factor of 0.90.

Technical losses in power systems, Technical Losses in Power Systems T...

Technical Losses in Power Systems The technical losses in power systems occur because of energy dissipated in the conductors and equipment used for transmission, transformat

Example of binary subtraction - positive number , Example  of binary  sub...

Example  of binary  subtraction - positive number Case 1.   Positive  number is more than negative number ( i e, answer is positive)   Example   subtract  4510 ( 1011012

Var compensators employing flexible ac transmission system, Var Compensator...

Var Compensators Employing Flexible AC Transmission System Devices These are a new generation of VAr compensators which employ solid-state devices (thyristors) for the generati

What is maximum memory size that can be addressed by 8086, What is the maxi...

What is the maximum memory size that can be addressed by 8086? In 8086, an memory location is addressed by 20 bit address and the address bus is 20 bit address and the address

Explain how memory paging is used for memory addressing, Explain how memory...

Explain how memory paging is used for memory addressing. The memory paging mechanism placed inside the 80386 and above permits any physical memory location to be assigned to se

DLD, DESIGN SR LATCH WITH UNIVARSAL LOGIC GATES.DRAW AND EXPLAIN THE LOGIC ...

DESIGN SR LATCH WITH UNIVARSAL LOGIC GATES.DRAW AND EXPLAIN THE LOGIC DIAGRAMS

LED, what ternary alloy, composition and binary substrate can be used for ...

what ternary alloy, composition and binary substrate can be used for an LED at 1.55 µm optical fiber windo

Dc charging and discharging circuit, The circuit shown below is a DC chargi...

The circuit shown below is a DC charging and discharging circuit. a.  At t = 0 sec, switch S1 is thrown to position 1 ("pos1"). Write the mathematical expressions for and .

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd