Spread time - power semiconductor devices , Electrical Engineering

Assignment Help:

Spread Time (ts)

During  spread time anode  voltage  falls from 10% Ia  to the  on state  voltage  drop  and anode  current  rises  from 90% Ia  to final  value  of anode  current i ,e Ia in this period whole  charges injected from   gate spreads over the entire section of  cathode and anode  current  reaches at steady state  condition.

There the total turn on time  ( ton ) can be written  as

Ton = td + Ir + ts

In these  intervals td tr and ts the rise time is high  a s compared to other. If  rise time it  is reduced beyond  a limit thyrisotr may get destroyed because rate of  rise  of anode  current  may be  large  as compared to the spread velocity of charges and this  may forms a  local  hot spot on the cathode surface of SCR. Turn on  time depends on gate  current. It can be  reduced by using  higher  value of gate  currents.

 


Related Discussions:- Spread time - power semiconductor devices

Model and simulaions, a short review article on the classification of time ...

a short review article on the classification of time frame

Give a short description of soft ferrites, Give a short description of soft...

Give a short description of soft ferrites . Soft ferrites and their applications: all non- metallic compounds are consisting of ferric oxide and one or two bivalent metal oxid

Hall effect, Describe hall effect?also describe it''s mathematical analysis...

Describe hall effect?also describe it''s mathematical analysis and it''s properties

Cpu based exchange, CPU Based Exchange:   In centralized control, all contr...

CPU Based Exchange:   In centralized control, all control equipment is replaced by a single processor which should be quite powerful. It should be capable of processing 10 to 100 c

Calculating the force between conductors, We now have an equation for the m...

We now have an equation for the magnetic field H at a distance r from a conductor carrying a current I amps And Ampere's experiments show that the force per unit lengthbetw

Signals in noise, Signals in Noise: Let us now consider a weak informat...

Signals in Noise: Let us now consider a weak information signal that is to be amplified by a noisy amplifier. The signal-to-noise ratio (SNR), usually expressed in decibels, be

Input offset voltage of operational amplifier, Q. Input offset voltage of o...

Q. Input offset voltage of operational amplifier? When both inputs are tied to ground, i.e., both differential-mode and common-mode inputs are zero, the output should be zero.

Determine the fourier series for the periodic wave - forms, Q. Determine th...

Q. Determine the Fourier series for the periodic wave - forms given in Figure.

Design of matching networks for amplifiers, Design a low noise amplifier us...

Design a low noise amplifier using an Infineon RF transistor BFP640. The amplifier is to be used to amplify the L2 GPS signal and so the centre frequency is 1227MHz and bandwidth 4

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd