Spread time - power semiconductor devices , Electrical Engineering

Assignment Help:

Spread Time (ts)

During  spread time anode  voltage  falls from 10% Ia  to the  on state  voltage  drop  and anode  current  rises  from 90% Ia  to final  value  of anode  current i ,e Ia in this period whole  charges injected from   gate spreads over the entire section of  cathode and anode  current  reaches at steady state  condition.

There the total turn on time  ( ton ) can be written  as

Ton = td + Ir + ts

In these  intervals td tr and ts the rise time is high  a s compared to other. If  rise time it  is reduced beyond  a limit thyrisotr may get destroyed because rate of  rise  of anode  current  may be  large  as compared to the spread velocity of charges and this  may forms a  local  hot spot on the cathode surface of SCR. Turn on  time depends on gate  current. It can be  reduced by using  higher  value of gate  currents.

 


Related Discussions:- Spread time - power semiconductor devices

Cro, why is delay line used in vertical deflection on systems of CRO?

why is delay line used in vertical deflection on systems of CRO?

State lenz''s law, Lenz's law states: 'The direction of an induced e.m....

Lenz's law states: 'The direction of an induced e.m.f. is always like that it tends to set up a current opposing the motion or the change of flux responsible for inducing that

How many interrupts does 8085 have, How many interrupts does 8085 have, men...

How many interrupts does 8085 have, mention them The 8085 has 5 interrupt signals; they are INTR, RST7.5, RST6.5, RST5.5 and TRAP

How to convert decimal to binary number, Q. How to convert Decimal to Binar...

Q. How to convert Decimal to Binary number? To convert the decimal to binary is slightly more difficult. There are two procedures (Methods) that may be used to convert from dec

Transistor, describe the compensation technique for both Vbe and Icbo

describe the compensation technique for both Vbe and Icbo

Image retreval and face recognization technique, block diagram of eigen fac...

block diagram of eigen face,Viola & Jones Method,Bio-ID,RWTH-i6 Groups of People Database

Major advantages of fet transistors over bjt transistors, Q. What the major...

Q. What the major advantages FET transistors over BJT transistors? a. BJT transistor (bipolar junction transistor) is a bipolar device - the prefix bi-revealing that the conduc

Emf produced by windings, Q. emf produced by windings? The time variati...

Q. emf produced by windings? The time variation of emf for a single conductor corresponds to the spatial variation of air-gap flux density. By suitable winding design, the harm

Indirect addressing , Indirect Addressing In this  addressing  mo e al...

Indirect Addressing In this  addressing  mo e also ne  of the  operands is the  stored in the memory. The memory  address of the  operand  is specified  by the  register pair.

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd