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Q. Consider the MOSFET circuit with variable voltage, with RD = 2k and VDD = 12 V. The static characteristics ofthe n-channel enhancement MOSFET are given in Figure.
(a) Drawthe load line and find the operating point if vGS = 4V.
(b) Sketch the resulting transfer curves (i.e., iD and vDS as a function of vGS) showing cutoff, active, and saturation regions.
(c) For relatively undistorted amplification, the MOSFET circuit must be restricted to signal variations within the active region. Let vGS (t) = 4 + 0.2 sin ωt V. Sketch iD(t) and vDS(t), and estimate the resulting voltage amplification Av.
(d) Let vGS (t) = 6 sin ωt , where ω is slow enough to satisfy the static condition. Sketch iD(t) and vDS(t) obtained from the transfer curves. Comment on the action of the MOSFET in the switching circuit.
Q. Describe the following phasor equations represented in the time domain: (a) ¯ E = K1e-¯ γz (b) ¯ E = K2e ¯ γz where z is the space coordinate, K1 and K2 are constants,
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The assignment comprises two parts, a CPLD Design Exercise and a CPLD Design Project. The CPLD Design Exercise will enable you to acquire competance in programmable logic design
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