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It has large energy gap 3.0ev and is regarded as high temperature semiconductor. It is extremely refectory subliming in the region of 28000C. Because of large band gap it is hoped that silicon carbide would be useful for very high temperature rectifier and transistors.
what is the difference between cohesive energy and binding eneergy
There is a maximum depth at which a diver can breathe through snorkel tube because as the depth increases, so does the pressure difference, tending to collapse the diver's lungs. S
A sprinter runs 100.0 m. If he travels at constant acceleration of 1.95 m/s2 for the first 6.00 s, and then at constant velocity for the remaining time, what was his average veloci
The points where amplitude is minimized are called as nodes.
Explain the principle of particle detection. Draw log n -V graph showing different regions and discuss the significant physical processes taking place in these regions.
define
with the aid diagram, explain what meant by moment of force
Ampere; A (after A.M. Ampere, 1775-1836) The basic SI unit of electric current, described as the current that, while going through two infinitely-long parallel conductors of ne
Consider charge of consistent surface density (charge-per-area) everywhere on an infinite horizontal plane. In computing the electric field due to such a charge distribution one ca
What is an alloy? An alloy is a homogeneous hybrid of two or more elements, at least one of which is a metal, and where the resulting material has metallic properties. The resu
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