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It has large energy gap 3.0ev and is regarded as high temperature semiconductor. It is extremely refectory subliming in the region of 28000C. Because of large band gap it is hoped that silicon carbide would be useful for very high temperature rectifier and transistors.
Similarities in Construction of MOSFET and JFET (i) JFET is a three terminal semiconductor device (source, drain and gate) in which current conduction is by majority carriers
Q. Explain why does heated air expand? Answer:- Temperature is habitually defined as the average thermal energy of the substance at hand. Therefore the hotter a substance
what is vector triple product
Mercury: Atomic number 80 Symbol Hg
compostion of two simple harmonic motion
what different is between photons? Answer; the difference between photons depends to their frequency, and frequency depends to the number of CPH in structure of photon. Thus
Define energy
how
LIST DIFFRENT THEM
how to perform experiment of deflection magnetometer,its concepts
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