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It has large energy gap 3.0ev and is regarded as high temperature semiconductor. It is extremely refectory subliming in the region of 28000C. Because of large band gap it is hoped that silicon carbide would be useful for very high temperature rectifier and transistors.
In free space electric field intensity is provided as E= y 20 cos (ωt-50x) volt/m. Determine displacement current density.
Understand the manufacturing technique of optical fibres by using chemical vapour deposition method. A Traversing oxy-hydrogen flame heats the reaction zone to a temperature ar
Making a shadow stick In an open space on the school ground drive a 130 cm stick into the ground and let the children stay a record of the length of the shadow, calculated two
Evaluate simple harmonic motion A simple pendulum is 2.00 m long. (a) What is the period of simple harmonic motion for this pendulum if it is hanging in an elevator acceler
Determine voltage gain for the circuit shown in figure below, with R F = 100K ? and R 1 =10 K? Ans. Determination of voltage gain: The provided operational
We here at Brilliant assume that you work through these problems using some sort of writing utensil. Take your pen or pencil, balance it on its tip, and let go. It falls over. How
explain surface tension using molecular theory
(a) Convert the network to the left of terminals AB in Figure 13.60 to an equivalent Thévenin circuit by initially converting to a Norton equivalent network. (b) Determine the
Length contraction
#question. third law of motion.
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