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It has large energy gap 3.0ev and is regarded as high temperature semiconductor. It is extremely refectory subliming in the region of 28000C. Because of large band gap it is hoped that silicon carbide would be useful for very high temperature rectifier and transistors.
All the given four Laws may be written in one relation, PV = nRT =m/n RT This formula is known as deal gas equation. Where m = mass of the gas M = molecular mass of t
Q. In the given circuit, calculate the potential differences across each resistor Solution : i) R s = R 1 + R 2 + R 3 = 10Ω ii) Current in circuit I = V/R s
A block of mass 2 kg is pulled up on a smooth incline making angle 30 degrees with horizontal . if block moves with an acceleration of 1 m/s2 , find a) Power delivered by the pull
Explain about the term spatial coherence of Laser. Spatial coherence: This coherence is a measure of the correlation among the phases of a light wave at several points’ tran
Why different colours of white light travell with different speed in a glass prism,while they travell with same speed in air? Ans)Since in diffeernt medium frequecy remains const
A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least 3 terminals for co
Hooke's law (R. Hooke): The stress applied on any solid is proportional to the strain it generates in the elastic limit for that solid. The constant of that proportionality is
What do you mean by transformer ratio? A current of 2A is passed through a coil of 1000 turns to produce a flux of 0.5µwb. Determine the self inductance of the coil.
a) Formation of domains b) On the basis of domains formed c) These are strongly attracted in an external magnetic field i.e. they easily go from low to high field region d
Q. What is Heisenberg's uncertainty principle? Write the three forms of uncertainty relations. Ans. The principle of uncertainty was described by Heisenberg in 1927. Acco
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