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It has large energy gap 3.0ev and is regarded as high temperature semiconductor. It is extremely refectory subliming in the region of 28000C. Because of large band gap it is hoped that silicon carbide would be useful for very high temperature rectifier and transistors.
Surface crystallography and epitaxy. Fe thin films are grown on a single-crystal Al(100) substrate surface. The films grow with no dislocations (if they are thin enough) with sug
The light passing through a quarter wave plate is analysed by a rotating Nicol prism. It is get that the intensity of the emergent light beam from the rotating Nicol prism becomes
NEGATIVE ACCELERATION OR RETARDATION OF DECLERATION: If velocity of a body is reducing, then its acceleration is said to be negative. The direction of negative acceleration is
GM counter
MOVEMENT OF CHARGE: Although electric current is referred to as the flow of electrons through a conductor, it should be noted that more exactly, any movement of electric charge
5 example of Classification and 5 types of Vectors and 3 Dimensional Forces
what is the relation between linear and angular variable?
The velocity of a body was noted to be constant during five minutes of its motion. What was acceleration during this interval its? As velocity of body remains same during given
Illustrate the polarity of Barrier potential. The free electrons which cross over the junction recombine with the holes of p-type and uncover some of the negative ac
Regard as two charged particles. At a given separation each one particle exerts a force of 12 N on the other. What force does every one exert on the other after someone moves the p
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