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It has large energy gap 3.0ev and is regarded as high temperature semiconductor. It is extremely refectory subliming in the region of 28000C. Because of large band gap it is hoped that silicon carbide would be useful for very high temperature rectifier and transistors.
Describe a) Potential difference between two points V, B) Intensity of electric field E. Derive the relation between them.
defination them ????
A constant potential difference is applied across the plates of a parallel-plate capacitor. Neglecting any edge effects, the electric field inside the capacitor is: a) constan
what is the physics principle involved in the lens maker equation
The average energy needed to release a nucleon from the nucleus is known as binding energy per nucleon. Binding energy per nucleon diffrence Stability of nucleus
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Q. Geosynchronous Orbit Communications satellites are able to be placed in equatorial orbits at a distance which results in an orbital period of one day. Therefore the satellit
Inertia on a bicycle Get your bicycle going and then apply the brakes rapidly. View the tendency of your body to stay in motion and pitch you over the handlebars. This is the r
A thin convex lens of focal length 0.1m and a thin concave lens of focal length 0.1m are placed co-axially in contact. What is the total power of the combination?
candela; cd The basic SI unit of luminous intensity described as the luminous intensity in a given direction of a source which emits monochromatic photons of frequency 540 x 1
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