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It has large energy gap 3.0ev and is regarded as high temperature semiconductor. It is extremely refectory subliming in the region of 28000C. Because of large band gap it is hoped that silicon carbide would be useful for very high temperature rectifier and transistors.
(i) Time section of vibration of particle is described as the time taken by the particle to complete single vibration about its mean position. (ii) It is the time given by the r
Working of a galbanometer?
What is coulmb''s law
what is dead time.
which electronic level would allow the hydrogen atom to absorb a photon but not to emit a photon
When we move from a positive charge towards an equal negative charge along the line joining the two then initially potential reduces in magnitude and at centre changes into zero, b
A laser beam from 200 watt source is focused on an area of 10 -8 m 2 . Determine the magnitude of the Pointing vector of the area.
Illustrate the chemical vapour deposition method in brief. Chemical vapour deposition method (CVD): A number of vapour phase deposition process have been developed for produ
discussion
Two positive lens L 1 and L 2 has the same focal length f>0. The distance between them is f/2. L 1 is placed to the left of L 2 . (a) An object is placed to the left of L1 wi
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