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Semiconductor Devices:
We have studied semiconductor devices. Firstly, we understand what semiconductors in terms of energy band diagrams are. Then we understand what is doping of semiconductors, what are p-type and n-type semiconductors. Diodes, two terminal semiconductor devices, are studied in terms of its I-V characteristics as well as Zener effect in semiconductor diodes and use of Zener diodes. Transistors, three terminal semiconductor devices, are the most important components of today's digital integrated circuits. A detailed explanation on Bipolar Junction Transistor (BJTs), MOSFET, JFET has been given, particularly their operational principles, biasing and small signal equivalent circuits. Next we have investigated the power semiconductor devices. In first section on switches, we have studied how a diode, transistor and MOSFET can be used as a switch in integrated circuits. We have also introduced to other power semiconductor devices by drawing its structure and symbol, explaining operational principles with the help of equivalent circuits viz. SCRs, TRIACs and IGBTs.
is armature reaction good or bad for dc generator?
Background Information Electrical machines usually consist of copper windings on steel cores, and their AC resistance is greater than their DC resistance. The power loss has
Draw the re-model for the circuit given in figure and calculate: a). The input impedance (β=100), b). The output impedance (r0 = 50 kΩ) and c). The mid-band collector-base
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#I need some guides in order to build a circuit that will be beneath a machine and turn that machine left/right/up/down
Q. Demonstrate how finite state machine model helps in designing a switching system and give a typical illustration. Ans: Switching systemessentially belongs to class of fi
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A three-phase transposed line is composed of one ACSR conductor per phase with flat horizontal spacing of 11 meters as shown in Figure (a). The conductors have a diameter of 3.625
Q. Explain the working of depletion MOSFET ? The gate voltage can control the resistance of the n-channel but as the gate is insulated from the channel, we can apply either a p
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