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Semiconductor Devices:
We have studied semiconductor devices. Firstly, we understand what semiconductors in terms of energy band diagrams are. Then we understand what is doping of semiconductors, what are p-type and n-type semiconductors. Diodes, two terminal semiconductor devices, are studied in terms of its I-V characteristics as well as Zener effect in semiconductor diodes and use of Zener diodes. Transistors, three terminal semiconductor devices, are the most important components of today's digital integrated circuits. A detailed explanation on Bipolar Junction Transistor (BJTs), MOSFET, JFET has been given, particularly their operational principles, biasing and small signal equivalent circuits. Next we have investigated the power semiconductor devices. In first section on switches, we have studied how a diode, transistor and MOSFET can be used as a switch in integrated circuits. We have also introduced to other power semiconductor devices by drawing its structure and symbol, explaining operational principles with the help of equivalent circuits viz. SCRs, TRIACs and IGBTs.
Bureau of Energy Efficiency Setting up of the Bureau of Energy Efficiency The Bureau of Energy Efficiency has been established with effect from 1st March, 2002 under the
Torque-Speed Characteristics of 3-Phase Induction Motors
A 100kw,230v,dc shunt generator,with Ra=0.05,and Rf=57.5 has no load rotational loss(friction,wandage,core loss)of 1.8kw.compute a) The generator efficiency at full load.
What is extended data output RAM? EDO RAM: A slight modification to the DRAM structure changes the device in an EDO (extended data output) DRAM device. Inside the EDO memory, a
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a) State the principle of working of transformer. b) A 230/110 V, single-phase transformer takes an input of 350 volt-amperes at no load while working at rated voltage. The core
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The frequency domain representation of a signal is shown below: i. What are the fundamental frequency and the corresponding period of this signal (shown in Figure )? ii. Pl
Q. Consider the magnetic circuit shown in Figure. Assume the relative permeability of the magnetic material to be 1000 and the cross-sectional area to be the same throughout. Deter
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