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Q. Develop a schematic diagram of a system in which the D/A converter of Figure can be employed in a digital voltmeter.
For carry flag CC ( Call on Carry ) and CNC ( Call on No Carry ) Instructions CC Calls the subroutine form the specified memory location if carry flag is set (CY=
1. Find the slope and the y-intercept of the line whose equation is 5x + 6y = 7. 2. Find the equation of the line that is parallel to 2x + 5y = 7 and passes through the midpoint
Simulation of a pn Junction An n + p junction is fabricated on a p-type silicon substrate with N A = 8×10 15 cm -3 . The n+ region has a concentration of N D = 1.5×10 18
Bipolar Junction Transistor: Transistor construction: the emitter layer is heavily doped, the base is light doped and the collector is only lightly doped. Outer layer has wi
Q. Mention some characteristics of transistors? · When a NPN transistor is working, there is always a constant 0.6 volt drop between the base and emitter, i.e., the base is alw
Q. Evaluate complex power in power system? The complex power ¯S in a single-phase systemis the complex sum of the real (P) and reactive (Q) power, expressed as follows:
Define Johnson Counters to Produce a Time Delay? The "serial in-serial out" shift register can be used as a time delay device. The amount of delay able to be controlled by:
Example Register to Memory Example : Write assembly language statement to copy 25H stored in register D to memory location 3052H. Solution : Assuming 3050H is s
Q. Given that a silicon n-channel JFET has V P = 5 V and I DSS = 12 mA, check whether the device is operating in the ohmic or active region when v GS =-3.2 V and i D = 0.5 mA.
Q. What happens when a negative bias is applied to the gate of a FET? The result of applying a negative bias to the gate is to reach the saturation level at a lower level of V
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