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a. Determine the circuit of three transistors dynamic RAM cell and define briefly read and write functions. b. Write short note on factors influencing choice of layer for wiring
100
20 cells with emf 1.45V and internal resistance 0.5Ω for each cells is linked 4 rows which every rows having of 5 cells in series. Load resistance 15Ω is connected to the battery.
The RAKE receiver exploits multipath channel characteristics and scrambling codes with good cross-correlation properties to realize a maximum ratio diversity combiner. Multipath pr
Q. Athree-phase, 600-kVA, 2300:230-V,Y-Ytrans- former bank has an iron loss of 4400 W and a full- load copper loss of 7600 W. Find the efficiency of the transformer for 70% full lo
physics of solids
INS Increment Register Pair Instruction Contents of the registers pair R P will be incremented by one and the result will be stored in the same register pair. It is
Q. Consider the magnetic circuit shown in Figure. Assume the relative permeability of the magnetic material to be 1000 and the cross-sectional area to be the same throughout. Deter
Q. The unit impulse response h(t) of a linear system is h(t) = 5e -t cos(2t - 30°). Determine H(s).
Q. List and explain the factors involved in the voltage build up of shunt generator. Ans. following factors are involved in voltage build up of shunt generation
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