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Q. What is the advantage of a two-stage overloaded RC coupled amplifier over a single stage one? What are it's uses?
It is a frequently encountered configuration. Here, the transistor switch Q2 is driven not directly by a gating signal, but rather by the output of a preceding transistor Q1. The transistor Q1 has, applied to it, a gating signal which drives this transistor alternately from cutoff to clamp and back again. Accordingly, in the absence of the loading effect of transistor Q2, the signal at the collector of Q1 would be a gating waveform of the same form as the input signal, except inverted polarity. When Q1 is cut off, the output impedance of Q1 is equal to the collector-circuit resistance. When transistor Q1 is in saturation, the output impedance is the parallel combination of collector-circuit resistance and the collector saturation resistance , and hence nominally equal to the latter. The circuit is designed as shown below.
Balanced Score Card and Key Performance Indicators Every successful organization measures its performance across the subsequent parameters, for dissemination to all stakeholde
Q. For the circuits shown in Figure, sketch the frequency response (magnitude and phase) of ¯V out / ¯V in .
how to compute the fourier series expansion of a rectangular pulse train
Power Diode A power diode is a two terminal, anode a and cathode K and two layer P and N junction devices. A PN junction normally formed by allowing diffusion and epita
For the circuit shown in Figure, use KCL and KVL to determine i 1 , i 2 , v bd and v x . Also, find v eb .
Q. JFET Common Drain Amplifier? The common drain FET amplifier is similar to the common collector configuration of the bipolar transistor. A general common drain JFET amplifier
Question : a) State six desirable requirements of a generic photo-detector. b) A gallium arsenide pin photo-diode has an intrinsic layer of width 1 μm. The diode is revers
Properties of a good heat sink For maximum efficiency, a heat sink should be 1)Be in good thermal contact with the transistor case 2)Have the largest surface area 3)Be
describe the compensation technique for both Vbe and Icbo
Q. A BJT is biased by the method shown in Figure. If V BEQ = 0.7V, β = 100, V CEQ = 10 V, and I CQ = 5 mA, find I 1 , I 2 , and IEQ.
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