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Question
a) Explain, with the aid of diagrams, the differences between the Princeton and Harvard microprocessor architectures.
b) Describe why the principle of locality of reference of cache memory drastically enhances the performance of processors.
c) Determine the overall throughput for 51 sequential instructions considering a four-stage pipeline and each instruction goes through fetch (4 nanoseconds), execute (1nanosecond), decode (2 nanoseconds) and write-back (5 nanoseconds) stages?
d) Explian the four main data access methods and provide one example of an entity which accesses data in each method.
Q. Explain the working of a photo - transistor with a sketch A second optoelectronic device that conducts current when exposed to light is the PHOTOTRANSISTOR. A phototransisto
Optimal Filtering A system identi?cation structure is shown in Figure 1. The discrete-time signal [ ] forms the input to an unknown system represented by a moving average
What is the difference among 8085 and 8086 in microprocessor? Ans) 8086 has a special concept known as memory segmentation. It permits parallel processing, whereas 8085 does no
Q. Explain about Zener Diodes? Most diodes are not intended to be operated in the reverse breakdown region. Diodes designed expressly to operate in the breakdown region are cal
Successive approximation ADC One method of addressing digital ramp ADC's shortcomings is so-called successive approximation ADC. Only change in this design is a very special c
APLICATION
A synchronous motor with a synchronous reactance of 12 ohms is operating with a current of 100 A at unity power factor supplying power to a large compressor. The phasor diagram for
Potentiometric type DVM: A potentiometric type of DVM, employs voltage comparison technique. In this DVM the unknown Voltage is compared with a reference voltage value is fixed by
Pinch off Voltage: The current in N-JFET because of a small voltage V DS is described by: I DSS = (2a) W/L (qN d μ n V DS ) In which 2a = channel thickness
A three-phase, wye-connected, 2300-V, four pole, 1000-kVA, 60-Hz synchronous machine has a synchronous reactanceXs = 5, a field resistance Rf = 10, and an approximately linear ma
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