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Question
a) Explain, with the aid of diagrams, the differences between the Princeton and Harvard microprocessor architectures.
b) Describe why the principle of locality of reference of cache memory drastically enhances the performance of processors.
c) Determine the overall throughput for 51 sequential instructions considering a four-stage pipeline and each instruction goes through fetch (4 nanoseconds), execute (1nanosecond), decode (2 nanoseconds) and write-back (5 nanoseconds) stages?
d) Explian the four main data access methods and provide one example of an entity which accesses data in each method.
Paper is hygroscopic and absorbent. This statement is true or false. Ans: Paper is hygroscopic and absorbent. This statement is true.
For zero flag CZ ( Call on Zero ) CNZ ( Call on no zero ) Instructions CZ call the subroutine from the specified memory location if zero flag is set (Z=1). The i
Q. Write notes on clamping ? When a signal drives an open-ended capacitor the average voltage level on the output terminal of the capacitor is determined by the initial charge
Q. What do you mean by Continuous signals? Continuous signals are described by time functionswhich are defined for all values of t (a continuous variable). Commercial broadcast
Q. Sinusoidal steady-state phasor analysis? The kind of response of a physical system in an applied excitation depends in general on the type of excitation, the elements in the
Role of ERCs: A National Electricity Policy is one of the key instruments for providing policy guidance to the Electricity Regulatory Commissions in discharge of their functio
SUB Subtract Instruction This instruction is used to subtract the contents of any register or memory location from the contents of accumulator. There are two formats as
Write a short summary of the AM superhet receiver, in exacting consider how the demodulation stage works, and remark on the choice of component values used.
Thermal noise This is the most significant noise in an ampli?er. It is produced by random movements of electrons in the resistors. This is caused by the ?uctuations in the volt
Explain how memory paging is used for memory addressing. The memory paging mechanism placed inside the 80386 and above permits any physical memory location to be assigned to se
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