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Question
a) Explain, with the aid of diagrams, the differences between the Princeton and Harvard microprocessor architectures.
b) Describe why the principle of locality of reference of cache memory drastically enhances the performance of processors.
c) Determine the overall throughput for 51 sequential instructions considering a four-stage pipeline and each instruction goes through fetch (4 nanoseconds), execute (1nanosecond), decode (2 nanoseconds) and write-back (5 nanoseconds) stages?
d) Explian the four main data access methods and provide one example of an entity which accesses data in each method.
Q. What are the three transistor configurations? The three configurations are common base (CB),common collector (CC) & common emitter(CE). The connection in which the base
Let the message signal m(t) = α cos (2πf m t) be used to either frequency-modulate or phase- modulate the carrier Ac cos(2πf c t). Find the modulated signal in each case.
A 2300-V, three-phase, wye-connected, round rotor synchronousmotor has a synchronous reactance of 3 per phase and an armature resistance of 0.25 per phase. The motor operates on
Write short notes of the following. a) Microprocessor b) Modes of data transfer. c) I/O processor d) Associative memory e) Software and Hardware interrupt
Q. Show Effects of Saliency and Saturation? Because of saliency, the reactancemeasured at the terminals of a salient-pole synchronousmachine as opposed to a cylindrical-rotor m
Q. Explain working of Bipolar junction transistors? The family of bipolar junction transistors has two members: the npn BJT and the pnp BJT. Both types contain semiconductor ju
Applications of high resistivity materials
(a) Carry out a topological analysis for the circuit shown in Figure 1. (i) Construct a graph for the circuit (ii) State the different trees you can choose. (b) Us
#question what are the types of lines used there and their application ..
The field resistance of a dc machine is 50 ohm at 20 o C. The resistance increases to 55 ohm at 50 o C. Find the temperature coefficient of the resistance material. Ans: Sol
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