Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Q. pn-Junction under Bias?
Let an external source be connected between the p- and n-regions, as shown in Figure (a). (b) shows the circuit representation of the pn-junction or diode, and its external circuit. The voltage source V, called the bias, either decreases or increases the potential barrier, thereby controlling the flow of carriers across the junction. With V = 0, the barrier is unaffected and the pn-junction has zero current. Positive values of V, known as forward biasing, decrease the potential barrier, thereby increasing the number of electrons and holes diffusing across the junction. The increased diffusion results in a net current, called the forward current, from the p-tothe n-region. With increased V, the forward current further increases rapidly because the barrier is reduced even further.Making V negative (reverse biasing), on the other hand, increases the potential barrier and reduces the number of carriers diffusing across the boundary. The drift component produced by the electric field from the n-tothe p-region causes a small current, called the reverse current (or saturation current) IS. The magnitude of the saturation current depends on the doping levels in the p- and n-type materials and on the physical size of the junction. Increasing the reverse bias, however, does not affect the reverse current significantly until breakdown occurs.
Define Shunt VAr Compensation? Shunt capacitors absorb leading VArs (i.e. they are used to supply lagging VArs) whereas reactors are used to absorbs lagging VArs. Capacitors an
Detection and Handling of Gas Leakage : If you are using a toxic gas or have a store for it you must have some devices to indicate the leakage, if any. Though numerous monitoring
Calculate the approximate donor binding energy Calculate the approximate donor binding energy for Si (r = 11.7,m x n = 1.18 m 0 ) Solution: From E= m * n q 4 / 2(4 πε 0
what is difference between dual trace and dual beam cro?
Binary to Octal Conversion To convert a binary number into octal divide the number into group of three bits each starting from the least significant bit. Then put equiva
The free electron theory of metals was first proposed by Drude and later improved by Lorentz. The main postulates of this theory are 1. All metal contain, adequate number
Q. Explain Television signal transmission? Television signals in television signal transmission are the electric signals generated by converting visual images through raster (T
Calculate the N.A of a step index fibre having n 1 =1.48 and n 2 =1.46. What is the maximum entrance angle ψ max for this fibre if the outer medium is air with n 1 =1.0? Given
1,Operation of face plate starter 2;Operation of a shaded pole motor 3,3 explained demerits of a rheostat method of starting adc machines
Problem (a) Figure gives the basic circuit of the diode limiter. Assuming that the diodes are ideal sketch and annotate the waveforms of the input voltage vi(t) and the load
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd