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Now that you have the input and output impedances you can design the matching networks. I will require either the Smith Charts showing how you calculated the matching components or a step-by-step guide to how you calculated their values. (Just quoting the values will gain you no marks since you could have taken the values straight from an online calculator.) Blank Smith Charts can be found on Moodle, in the "Extra materials and resources" section.
Once you have the component values of your matching circuits you will be in a position to test the performance of your circuit. Open the AmpDesign schematic and draw you circuit and then test. The AmpDesign data display will open. The graphs which are displayed will be required for your report. Now you will need to modify the design so that the ideal components are changed to more realistic devices. The models for these devices are derived from physical S parameter measurements and can be found on the AMpDesignReal schematic. Enter you modified circuit and run the simulations.
Write down basic postulates of sommerfield’s free electron gas model. Show that the number of energy states per unit energy is given by g(E) = 4Rv/h 3 (2m) 3/2 E 1/2 . What is
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A silicon foundry produced 1.2 million 8-inch wafers in 1997; how many 600 mil die is that? The foundry is scheduled to produce 20,000 12-inch wafers per month by the year 2001 us
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how the interrupts are affected by system rest
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For Parity Flag CPRE (Call on parity even) and CPO (Call or parity Odd) Instruction CPE calls the subroutine from the specified memory location if parity flag is
Q. Show Basic Construction of MOSFET? The basic construction of the n-channel depletion-type MOSFET is provided in Figure. A slab of p-type material is formed from a silicon
What is ideal and real sources? Source conversion? Nodal voltage method for d.c circuit?
1555_Use delta-wye transformation for network reduction.png what is the solution to this particular problem?
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