Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Metal-Oxide-Semiconductor Structure
A traditional metal-oxide-semiconductor abbreviated as MOS structure is acquired by growing a layer of silicon dioxide (SiO2) on top of a silicon substrate and depositing a layer of metal or polycrystalline silicon (the latter is typically used). Since the silicon dioxide is a dielectric material, its structure is equal to a planar capacitor, along with one of the electrodes replaced by a semiconductor.
While a voltage is applied across a MOS structure, it changes the distribution of charges in the semiconductor. If we refer a P-type semiconductor (along with NA the density of acceptors, p the density of holes; p = NA in neutral bulk), a positive (+ive) voltage, VGB, from gate to body (see figure) forms a depletion layer by forcing the positively charged holes away from the gate-insulator or semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ion. If VGB is sufficiently high, a high concentration of negative charge carriers forms in an inversion layer situated in a thin layer next to the interface in between the semiconductor and the insulator. Not like the MOSFET, in which the inversion layer electrons are supplied fast from the source or drain electrodes, in the MOS capacitor they are generated much more slowly by thermal generation by carrier generation and recombination centers in the depletion region.
Figure: MOSFET structure and channel formation
Usually, the gate voltage at which the volume density of electrons in the inversion layer is similar as the volume density of holes in the body is called the threshold voltage. This structure along with p-type body is the basis of the N-type MOSFET that needs the addition of an N-type source and drain regions.
Q. Explain Current-to-Voltage Amplifier? The basic circuit is shown in Figure, which is similar to that of an inverting amplifier. The - input is connected directly to a curren
Ask questionDraw the following circuits on the PROTEUS and check the output waveform on oscilloscope #Minimum 100 words accepted#
Gate terminal - field-effect transistor: The names of the terminals consider to their functions. The gate terminal might be thought of since controlling the opening and closin
Q. A balanced delta-connected load has a per-phase impedance of 45 60° . It is connected to a three-phase, 208-V, 60-Hz supply by a three- phase feeder that has a per-phase impeda
Write a short explanation of the principles of super-heterodyne receiver. It may help to use sample block diagram to state the process. Why is the production of the intermediate fr
Q. What do you mean by Signal multipath? Signal multipath occurs with electromagnetic wave propagation via sky wave in the HF range. When the transmitted signal reaches the rec
Clipper Circuits: Clipper circuit have ability to Clipper of portions of the input signals without distorting the remaining part of the alternating wave form. Clamper net
Briefly explain single mode and multimode fibres The optical fibres were categorized within two according to the number of modes it passes as: • Single mode fibres • Multi mode
Describe 74LS139 memory decoder. The 74LS139 is a dual 2-to-4 line decoder. This contains two separate 2-to-4 line decoders - all with its address, output and enable connection
What is Capacitance - Capacitance is explained to be the amount of charge Q stored in among the two plates for a potential difference or voltage V existing across the plates.
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd