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Extrinsic Material In addition to thermally generated carriers, it is possible to create carriers in the semiconductor by purposely introducing impurities into the crystal
Q. Consider the MOSFET circuit with variable voltage, with RD = 2k and VDD = 12 V. The static characteristics of the n-channel enhancement MOSFET are given in Figure. (a) Drawt
#question.resultant of two simple harmonic motions.
Q. Show an arrangement for multiplexing 64-to-1 by using four 16-to-1 multiplexers and one 4-to-1 multiplexer.
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Q. Draw and explain Colpitts oscillator? Colpitt's oscillator is a superb circuit which is used widely in commercial signal generations of frequency of 100 Mhz . It consists o
Q. Explain low-frequency response of RC coupled amplifier. What are the reasons for reduction in gain at low frequencies? The RC coupled amplifier circuit contains capacit
Q. A source of impedance ¯ Z S = R S = 100 has an open-circuit voltage v S (t) = 12.5 cos ωot and drives a 75- transmission line terminated with a 75- load. Find the current
list the key parameters to describe the ideal operational amplifier
Diffusion Capacitance Diffusion capacitance is the capacitance because of transport of charge carriers among the two terminals of a device, for instance, the diffusion of carr
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