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JFET
The JFET (junction gate field-effect transistor) is a long channel of semiconductor material, doped to consist of abundance of positive charge carriers (p-type), or of negative carriers (n-type).
Figure: Circuit symbol for an n-Channel JFET
Contacts at each end make the source(S) and drain (D). The gate (G) (control) terminal has doping opposite to that of the channel that surrounds it, that is why there is a P-N junction at the interface. Terminals to connect with the outside are generally made ohmic.
Figure: Circuit symbol for a p-Channel JFET
Q. A silicon npn BJT is biased by the method shown in Figure, with R E = 240 , R 2 = 3000 , and V CC = 24 V. The operating point corresponds to V BEQ = 0.8V, I BQ = 110 µA,
use of ranging and attenuator circuit
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