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main differnce of frequence analysi method
Assume that an abrupt Si p-n junction with area 10-4 cm2 has NA=10 17 /cm 3 and ND=10 17 /cm 3 is working at room temperature. It is given that μ n = 700 cm 2 /v-s, μ P =250 cm
hello i have MATLAB 2013 how can i send and receive files using Bluetooth
Stratos Corporation is a privately held tablet semiconductor technology firm with bright growth prospects.The past 5 years have seen the firm evolve from a pure startup to a profit
CT 10VA, 50A/5A, 6ohz, 2.4KV required nominal primary voltage?
Switching Characteristics The switching characteristics of power MOSFET the delay time and rise time are responsible to remove the effect of internal capacitance of the devi
Q. Determine L and C of the band reject filter circuit of Figure to have a center frequency of 100 kHz and a bandwidth of 5 kHz. Also find the Q of the filter.
Q. Consider the common-source JFET circuit shown in Figure with ?xed bias. Sketch the sinusoidal variations of drain current, drain voltage, and gate voltage superimposed on the di
Mathematical relationship between the induced e.m.f and the network Faraday noted that the e.m.f induced in a loop is proportional to the rate of change of magnetic flux by it:
cosider a causal LTI system whose system function is H(z)=1-1/5z^-1/(1-1/2z^-1+1/3z^-2)(1+1/4z^-1) find the direct form 1 and direct form 2
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