How dram’s are different from sram’s, Electrical Engineering

Assignment Help:

How DRAM's are different from SRAM's? Why DRAMs are said to use address multiplexing?

Ans

Dynamic RAM (DRAM) is basically the same as SRAM except that it recollects data for only 2 or 4 ms on an internal capacitor. After 2 or 4 ms, contents of the DRAM should be completely rewritten (refreshed) since the capacitorsthat store logic 1 or logic 0, lose their charges. Whole content of the memory is refreshed with 256 reads in a 2-to-4 ms interval. Refreshing also takes place during a write, a read or during a special refresh cycle.


Related Discussions:- How dram’s are different from sram’s

Explain corrosion, Explain Corrosion. Corrosion: The process of constan...

Explain Corrosion. Corrosion: The process of constant eating (or destruction) up of metals (by the surface) by the surrounding is termed as corrosion. These metals are corroded

Use delta-wye transformation for network reduction, Use delta-wye transform...

Use delta-wye transformation for network reduction and determine the current through the 12- resistor in the circuit of Figure(a).

Explain the synchronous up-down counters, Explain the Synchronous Up-Down C...

Explain the Synchronous Up-Down Counters? The circuit of a 3-bit synchronous up-down counter and a table of its sequence are shown below.  Alike to an asynchronous up-down count

Obtain the sop expressions for given k map, Q. The K map of a logic functio...

Q. The K map of a logic function is shown in Figure, in which ds denote don't-care conditions. Obtain the SOP expressions.

Diatomic molecules in three dimensions, Consider the open rotation of a dia...

Consider the open rotation of a diatomic molecule consisting of two atoms of mass and respectively divided by a distance presume that the molecule is rigid with center of mass fixe

Static characteristics of the npn silicon bjt, Consider the common-emitter ...

Consider the common-emitter BJT circuit shown in Figure (a). The static characteristics of the npn silicon BJT are given in Figure (b) along with the load line. Calculate iB for v

Illustrate bandstop filter, Q. The dual situations is shown in Figure , in ...

Q. The dual situations is shown in Figure , in which a high-pass and a low-pass filter are connected in parallel to produce a bandstop filter. With ω CLP = 10 CHP = 50, ω 0

Example of high resistivity material, Example of high resistivity material ...

Example of high resistivity material is (A) Nichrome              (B) Silver (C) Gold                      (D) Copper Ans: Nichrome is example of high resistivity

Sketch the resulting transfer curves, Q. Consider the MOSFET circuit with v...

Q. Consider the MOSFET circuit with variable voltage, with RD = 2k and VDD = 12 V. The static characteristics of the n-channel enhancement MOSFET are given in Figure. (a) Drawt

Critical rate of rise of current - thyristor , Critical Rate of  Rise of ...

Critical Rate of  Rise of Current The maximum  rate of  increase of current  during  on state  which  the SCR  can tolerate is called  the critical rate of rise  of current  f

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd