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a) Give four features that were traditionally reserved to RISC architectures?
b) Determine the overall throughput for 21 sequential instructions assuming a four-stage pipeline and each instruction goes through fetch (7 nanoseconds), decode (2 nanoseconds), execute (1nanosecond) and write-back (10 nanoseconds) stages?
c) Calculate the CPI for a hypothetical 1.8 GHz processor with a benchmarked rating of 500 MIPS?
d) Assume a processor with instruction frequencies and costs as follows
• Integer ALU: 50%, 2 cycles• Load: 25%, 5 cycles• Store: 10%, 3 cycles• Branch: 15%, 2 cycles
Determine which of the following three cases will improve or reduce overall performance and by how much:
CASE 1: Reduce Branch cost to 1 cycle and Store cost to 2 cyclesCASE 2: Reduce Load cost to 3 cycles while increasing ALU cost to 4 cyclesCASE 3: Reduce Load cost to 4 cycles
e) Mention one advantage of using DMA over Interrupt-Driven I/O. Give the basic structure of a basic DMA module.
kindly tell me which text book is usefull forlearn the basic electricle.
Analogue Threshold switching a) Include a variable potential divider to the schematic diagram to control the transistor base voltage b) Include the potential divider compon
Sub Threshold The sub threshold I-V curve depends exponentially on the threshold voltage, introducing a strong reliance on any manufacturing variation that influences threshol
why we rotate the armature of dc motor in anticlockwise direction
Low-pass electronic filter: The capacitors and inductors are the reactive elements of the filter. The number of elements ascertains the order of the filter. In this situation,
a. Determine the ratio of cross section of a circular waveguide to that of a rectangular one, if each is to have similar cut off wavelength for its dominant mode. b. Compare wav
I want project ideas.
i want to plot a system current transfer matrix element vs frequency curve.how can i draw it?any suggestion.
applications of dynamically induced emf
Power Transistor A power transistor is a three layer PNP or NPN semiconductor device having two junctions. Three terminals of power transistors are collector emitter
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