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a) Give four features that were traditionally reserved to RISC architectures?
b) Determine the overall throughput for 21 sequential instructions assuming a four-stage pipeline and each instruction goes through fetch (7 nanoseconds), decode (2 nanoseconds), execute (1nanosecond) and write-back (10 nanoseconds) stages?
c) Calculate the CPI for a hypothetical 1.8 GHz processor with a benchmarked rating of 500 MIPS?
d) Assume a processor with instruction frequencies and costs as follows
• Integer ALU: 50%, 2 cycles• Load: 25%, 5 cycles• Store: 10%, 3 cycles• Branch: 15%, 2 cycles
Determine which of the following three cases will improve or reduce overall performance and by how much:
CASE 1: Reduce Branch cost to 1 cycle and Store cost to 2 cyclesCASE 2: Reduce Load cost to 3 cycles while increasing ALU cost to 4 cyclesCASE 3: Reduce Load cost to 4 cycles
e) Mention one advantage of using DMA over Interrupt-Driven I/O. Give the basic structure of a basic DMA module.
what is finger voltage
I need to do this experiment. Can anyone help me out doing this
SUB Subtract Instruction This instruction is used to subtract the contents of any register or memory location from the contents of accumulator. There are two formats as
Q. A balanced three-phase, wye-connected, 2400- V, 60-Hz source supplies two balanced wye- connected loads in parallel. The first draws 15 kVA at 0.8 power factor lagging, and the
Define Lines Parameters In power system analysis, the parameters of interest when modelling power lines are: inductance, capacitance, series resistance and leakage resistance.
This is basically a simple senior design project where the professors are giving us a limited budget and providing us with an Arduino Board. (We can use rasberry pi, beagle bone, e
Consider an RLC series circuit excited by v(t) = Ve st in the time domain. Assume no initial capacitor voltage or inductive current at t = 0. Draw the transformed network in the s
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Types of cells and batteries are:- a. Carbon-zinc cell b. Nickel-cadmium cell c. Alkaline celld. d. Edison cell e. Mercury cell
Q. A silicon npn BJT is biased by the method shown in Figure, with R E = 240 , R 2 = 3000 , and V CC = 24 V. The operating point corresponds to V BEQ = 0.8V, I BQ = 110 µA,
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