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Q. An n-channel JFET is given to have VP = 3V and IDSS = 6 mA.
(a) Find the smallest value of vDS when vGS =-2 V if the operation is to be in the active region.
(b) Determine the corresponding iD for the smallest vDS.
Question: General EMC Knowledge (a) Give 2 reasons for the augmentation of electromagnetic radiation in urban regions. (b) Pointe aux Diable bears its name due to the a
Q. Given that a silicon n-channel JFET has V P = 5 V and I DSS = 12 mA, check whether the device is operating in the ohmic or active region when v GS =-3.2 V and i D = 0.5 mA.
Now that you have the input and output impedances you can design the matching networks. I will require either the Smith Charts showing how you calculated the matching components or
The method by which electrical signals convey information has been described. Systems components have been selected and interfaced to enable a chosen system to perform a desired o
Q. A negative impedance converter is used, as shown in Figure. Show that the load current i L is given by v in /R, which is independent of Z L . Note that since the load sees a cu
Q. A BJT is biased by the method shown in Figure. If V BEQ = 0.7V, β = 100, V CEQ = 10 V, and I CQ = 5 mA, find I 1 , I 2 , and IEQ.
Explain all of your steps and follow a logical train of thought. Clearly describe all design rationale. 1) Design a device to deliver a sinusoidal 500kHz pulse through a piezoe
Unsolved numerical
advantage and disadvantage of alloying steel with silicon
Negative test cases for testing mobile phones are: 1.taking out the SIM card and made a call 2. by invalid phone number 3. Made a call at which there is no tower signa
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