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a) Sketch the small-signal equivalent circuit for a field-effect transistor (FET) and explain how it can be deduced from the properties of the real device.
b) Draw the circuit diagram for a common-source FET ac amplifier based on a voltage-divider bias scheme.
c) Draw the ac equivalent circuit for the above amplifier.
d) If the transconductance of the FET used in a common-source amplifier is 3.4 x 10-3 S and the load resistance is 4.7 kΩ, what is the approximate voltage gain of the amplifier?
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It is a highly doped p-n junction which is not smashed by high reverse current. The breakdown voltage is made very sharp. In the forward bias, the zener diode do as ordinary diode.
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