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a) Sketch the small-signal equivalent circuit for a field-effect transistor (FET) and explain how it can be deduced from the properties of the real device.
b) Draw the circuit diagram for a common-source FET ac amplifier based on a voltage-divider bias scheme.
c) Draw the ac equivalent circuit for the above amplifier.
d) If the transconductance of the FET used in a common-source amplifier is 3.4 x 10-3 S and the load resistance is 4.7 kΩ, what is the approximate voltage gain of the amplifier?
It has large energy gap 3.0ev and is regarded as high temperature semiconductor. It is extremely refectory subliming in the region of 2800 0 C. Because of large band gap it is hope
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YES GRAVITY CAN BAND LIGHT e.g. GRAVITY OF BACK HOLE IS VERY STRONG
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