Factors involved in the voltage build up of shunt generator, Electrical Engineering

Assignment Help:

Q. List and explain the factors involved in the voltage build up of shunt generator.

Ans.

following factors are involved in voltage build up of shunt generation

 

(1) There must be same residual magnetism in poles.

 

(2) For the given direction of rotation the shunt field coils should be correctly connected to the armature i.e. they should be so connected that the induced current reinforce the emf produced initially due to resident magnetism.

 

(3) If excited on open circuit its shunt field resistance should be less than the critical resistance.

 

(4) If excited on load, then its shunt field resistance should be more than certain minimum value of resistance which is given by internal character.

 

 


Related Discussions:- Factors involved in the voltage build up of shunt generator

CAO, conditional branch instruction

conditional branch instruction

Vlsi, what is the difference between latch and flipflop

what is the difference between latch and flipflop

Nodal Analysis, sample problem and solutions with answer

sample problem and solutions with answer

PLC Programming, FIG. 2 Car Park Simulation Consider the above diagram, FI...

FIG. 2 Car Park Simulation Consider the above diagram, FIGURE 2, of the car park. The object of this assignment is to write a program to operate the barriers to allow the cars in

Mode of propagation of electromagnetic waves, Q. Mode of propagation of ele...

Q. Mode of propagation of electromagnetic waves? The mode of propagation of electromagnetic waves in free space and atmosphere may be subdivided into three categories: • Gro

Measurement, explain a basic measurement system

explain a basic measurement system

Gate terminal - field-effect transistor, Gate terminal - field-effect trans...

Gate terminal - field-effect transistor: The names of the terminals consider to their functions. The gate terminal might be thought of since controlling the opening and closin

Simulation of a pn junction, Simulation of a pn Junction An n + p jun...

Simulation of a pn Junction An n + p junction is fabricated on a p-type silicon substrate with N A = 8×10 15 cm -3 . The n+ region has a concentration of N D = 1.5×10 18

Diploma in electrical engineering, After I complete my diploma how I get a ...

After I complete my diploma how I get a job in goverment

Energy bands, Energy Bands 1) Since isolated atoms are brought togethe...

Energy Bands 1) Since isolated atoms are brought together to make a solid, the electron wave functions begin to overlap. 2) Several interactions occur, and, at the proper i

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd