Factors contributing to high technical losses, Electrical Engineering

Assignment Help:

Factors Contributing To High Technical Losses

Power distribution systems in developing countries have faced a phenomenal and rapid growth within the last two decades. Although the losses in EHV network are commonly about 4%-5%, bulk of the losses occurs in the Sub-Transmission and Distribution system. We now elaborate the main factors in which contribute to high technical losses.

Factors Contributing to High Technical Losses

1. Weak and inadequate system because of low investments in the system.

2. Large-scale rural electrification.

3. Ad-hoc expansion of the system without scientific planning.

4. Various transformation stages.

5. Low power factor.

6. Low quality of equipment, poor construction and inadequate maintenance of equipment.

7. Improper load management.

8. Distribution transformers not located at Load centre.


Related Discussions:- Factors contributing to high technical losses

Short-term measures for technical loss reduction, Short-Term Measures for T...

Short-Term Measures for Technical Loss Reduction The short-term measures involve measures needs for immediate improvement and reduction of losses within the system. These are

Daa decimal adjust accumulator instruction , DAA Decimal Adjust Accumulator...

DAA Decimal Adjust Accumulator Instruction This  instruction adjusts the contents  of the accumulator  into BDC (Binary Coded Decimal )  form  after a BCD  addition. It should

Diode, report on diode

report on diode

Newton raphson , hi can you help with newton raphson?

hi can you help with newton raphson?

Find instantaneous electromagnetic torque, Consider an elementary two-pole ...

Consider an elementary two-pole rotating machine with a uniform (or smooth) air gap, as shown in Figure, inwhich the cylindrical rotor ismountedwithin the stator consisting of a ho

Sketch the resulting transfer curves, Q. Consider the MOSFET circuit with v...

Q. Consider the MOSFET circuit with variable voltage, with RD = 2k and VDD = 12 V. The static characteristics of the n-channel enhancement MOSFET are given in Figure. (a) Drawt

Phisics, deriving formula of the frictional force

deriving formula of the frictional force

Microprocessors, Memory location 2000H has the word 5000H stored in it. Wha...

Memory location 2000H has the word 5000H stored in it. What does each location contain after DEC WORD PTR [2000H].

Explain immediate data addressing mode, Explain immediate data addressing m...

Explain immediate data addressing mode (with examples) available in microprocessors. Immediate Mode: The operand given in immediate mode is the actual data itself.

Structure of bipolar junction transistor, Structure of Bipolar junction tra...

Structure of Bipolar junction transistor:  A BJT contains three differently doped semiconductor regions that are: emitter region, base region and collector region. These regio

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd