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Q. Explain the construction of depletion MOSFET?
A slab of p-type material is formed from a silicon base and it is referred to as the substrate. It is the foundation upon which the device is constructed. In some cases substrate is internally connected to the source terminal. The source and the drain terminals are connected through metallic contacts to n-doped regions linked by an n-channel. The gate is also connected to a metal contact surface but remains insulated from the n-channel by a very thin SiO2 layer. So there is no direct electrical connection between the gate terminal and the channel of a MOSFET. Insulating layer of SiO2 also accounts for the very desirable high input impedance of the device.
Explain protected mode addressing. This addressing permits access to data and programs located as the first 1M byte of memory, with in the first 1M byte of memory. Addressing
residual voltage in potential transformer
Name the materials used in case of Bimetals and give reasons. Bimetals : Alloy of nickel and iron along with low value of coefficient of thermal expansion are utilized as
Q. Two three-phase generators are supplying to a common balanced three-phase load of 30 kW at 0.8 power factor lagging. The per-phase impedance of the lines connecting the generato
The increase in the current is building up the magnetic field surrounding the coil. Energy is stored in that field. Consider the energy supplied by the voltage source during the
defination and working ?
a. Given a timer with a terminal count and a clock frequency of 10 MHz measure the following: (i) Range & Resolution (ii) Terminal count values needed to measure 3ms interval
A switch-mode power supply is to be designed with the following specifications: input voltage V s = 48 V ± 10%, output voltage V o = 5 V, switching frequency f s = 100 kHz, outp
Determine self inductance of coil: A flux of 0.5 m Wb is generated by coil A of 600 turns wound on a ring with a current of 2 A in it. Determine (a) self inductance of coil A,
calculating different op amps
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