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Q. Explain the construction of depletion MOSFET?
A slab of p-type material is formed from a silicon base and it is referred to as the substrate. It is the foundation upon which the device is constructed. In some cases substrate is internally connected to the source terminal. The source and the drain terminals are connected through metallic contacts to n-doped regions linked by an n-channel. The gate is also connected to a metal contact surface but remains insulated from the n-channel by a very thin SiO2 layer. So there is no direct electrical connection between the gate terminal and the channel of a MOSFET. Insulating layer of SiO2 also accounts for the very desirable high input impedance of the device.
V-I Characteristics In the normal mode of operation of an IGBT a positive voltage is applied to the collector relative to emitter. When the gate is at zero potential wi
Effective negative voltage: Effect negative voltage of get, when depend upon Pitch of voltage: the level of that results in id =0 ma is defined by eggs =vp with vp
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Q. Explain about Rotating Machines? Themost widely used electromechanical device is a rotatingmachine, which utilizes themagnetic field to store energy. The main purpose of mos
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