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Q. Explain the construction of depletion MOSFET?
A slab of p-type material is formed from a silicon base and it is referred to as the substrate. It is the foundation upon which the device is constructed. In some cases substrate is internally connected to the source terminal. The source and the drain terminals are connected through metallic contacts to n-doped regions linked by an n-channel. The gate is also connected to a metal contact surface but remains insulated from the n-channel by a very thin SiO2 layer. So there is no direct electrical connection between the gate terminal and the channel of a MOSFET. Insulating layer of SiO2 also accounts for the very desirable high input impedance of the device.
why Vout begins to decrease ...
A bandpass filter design can be accomplished through the cascade connection shown in Figure, where the frequencies between the two cutoffs fall in the passband of both filters and
a. Given a timer with a terminal count and a clock frequency of 10 MHz measure the following: (i) Range & Resolution (ii) Terminal count values needed to measure 3ms interval
Q. An elementary two-pole rotating machine with uniform air gap, as shown in Figure, has a stator-winding self-inductance Lss of 50 mH, a rotor-winding self-inductance Lrr of 50 mH
what is the significant of damping coficient
When a machine has more than two poles, only a single pair of poles needs to be considered because the electric, magnetic, and mechanical conditions associated with every other pol
Define Spectrum of Real Signals? In the real world, we rarely come throughout a pure sine wave. Typical signals have a wide spectrum as displayed in the above diagram. Informat
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Explain chemical vapour deposition method for the preparation of nanomaterial and its properties
Consider the basic MOSFET circuit shown in Figure with variable gate voltage. The MOSFET is given to have very large V A , V T = 4V,and I DSS = 8 mA. Determine i D and v DS for
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