Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Explain the construction of a MOSFET. Draw the symbols and diagrams of both P-channel and N-channel MOSFET.
As JFET and MOSFET also have source, drain and gate. Its gate is insulated by its conducting channel through an ultra-thin metal oxide insulating film (generally of silicon dioxide SiO2), due to this insulating property; MOSFET is also termed as insulated gate field effect transistor that is IGFET or IGT. Now also, gate voltage controls the drain current but the major difference among JFET and MOSFET is that, we can apply both positive and negative voltages to the gate since this is insulated from the channel, in later case. Furthermore the gate, SiO2 insulator and channel form a parallel plate capacitor. Not like JFET, a MOSFET has only one p- region or n-region termed as substrate as demonstrated in the figure (a) and figure (b). Normally this is shorted to the source internally. Symbols of both N- channel and P- channel MOSFET are demonstrated below.
Symbols of P and N channel MOSFET
please give the source coding of fast decoupled method
PNP The other kind of BJT is the PNP with the letters "P" and "N" standing for the majority charge carriers inside the dissimilar regions of the transistor. Figure:
Q. For a transmission-line model that includes only the series impedance Z, sketch phasor diagrams for: (a) Lagging power factor load. (b) Leading power factor load.
Dummy coils : These coils are used with wave winding and resorted to when the requirement of the winding are not met by the standard armature punching available in armature win
pls give me the schematic of it
Explain the properties of high resistivity materials. High resistivity materials: The conducting materials containing resistivity from 10 -6 to 10 -3 ohm-m come under such
Hi all i want a conclusion for V-I characteristic curve of Silicon Diode (I) using Oscilloscope
The per-phase synchronous reactance of a three-phase, wye-connected, 2.5-MVA, 6.6-kV, 60-Hz turboalternator is 10 . Neglect the armature resistance and saturation. Calculate the v
Q. Draw a centralized SPC organization. Ans: A dual processor architecture can be configured to operate in one of three modes: (i) Standby mode (ii) Synchronous dupl
Background Information Electrical machines usually consist of copper windings on steel cores, and their AC resistance is greater than their DC resistance. The power loss has
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd