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Explain the construction of a MOSFET. Draw the symbols and diagrams of both P-channel and N-channel MOSFET.
As JFET and MOSFET also have source, drain and gate. Its gate is insulated by its conducting channel through an ultra-thin metal oxide insulating film (generally of silicon dioxide SiO2), due to this insulating property; MOSFET is also termed as insulated gate field effect transistor that is IGFET or IGT. Now also, gate voltage controls the drain current but the major difference among JFET and MOSFET is that, we can apply both positive and negative voltages to the gate since this is insulated from the channel, in later case. Furthermore the gate, SiO2 insulator and channel form a parallel plate capacitor. Not like JFET, a MOSFET has only one p- region or n-region termed as substrate as demonstrated in the figure (a) and figure (b). Normally this is shorted to the source internally. Symbols of both N- channel and P- channel MOSFET are demonstrated below.
Symbols of P and N channel MOSFET
Write Some Notes for the Gauss-Seidel Method? 1. Equation below is used to calculate the voltage at each busbar in turn, always using the most up to date values for the other
Q. (a) An audio amplifier with R i = 10 k, R o = 0, and ¯A(ω), as shown in Figure (a), is used in the circuit shown in Figure with R S = 1 k,R L = 16 , and C = 0.2 µF. Sk
a. Determine the circuit of three transistors dynamic RAM cell and define briefly read and write functions. b. Write short note on factors influencing choice of layer for wiring
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fast decoupled program
Refer to Figure 100. Assume MKS units. Given: R1= 4, R2=14, R3= 9, I4= 8, I5= 7. Determine: Ieq, Req, and V3.
Buck Boost Converter The output of buck boost regulator may be less than or greater than the input voltage. Since the polarity of output voltage is opposite to that
Q. Consider the circuit shown in Figure. (a) Given v(t) = 10e -t V, find the current source is(t) needed. (b) Given i(t) = 10e -t A, find the voltage source v (t) needed.
The French scientist, Ampere, (1775- 1836), conducted a series of experiments on the force between current carrying conductors. He found that: force per metre of wire (
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