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Q. Explain Read-only memory?
ROM is nonvolatile (because it maintains its contents even when its power is shut off) and is used to store data and programs that do not change during the operation of the system. The mask-programmed ROMs are read-only devices that are programmed for data storage during the manufacturing of the chip itself. These are generally less expensive devices for mass production. Character-font memory for laser printers is a good example. Programmable read-only memory (PROM) is a field-programmable memory that is fabricated by the manufacturer containing all 0s and is programmed irreversibly by the user by electrically changing appropriate 0s to 1s. PROMs are quite economical in small quantities. Erasable programmable read-only memory (EPROM) is nonvolatile and widely used in microprocessor systems for program storage. It can be erased by shining an ultraviolet light and reprogrammed if necessary. These are produced in lowtomoderate volumes.
Disconnection of Supply: An Appellate Tribunal has been created over the Commissions for speedy dispute resolution. It is assumed to adjudicate appeals against orders of the a
Hello sir, m engineering final year student, we made a project as I mentioned above, I wanna add some extra feature on it, meant to modified it...want to add up some extra feature
1. Work out the voltage for the following arrangement of 1.5V cells : (to achieve a pass grade, solve problems with cells in series, parallel and series-parallel) 2.
Q. A rectangular air-?lled RG-52/U is made of brass (ρ = 3.9 × 10-8 m) and has dimensions a = 22.86 mm and b = 10.16 mm. (a) Determine ¯ Z0(= R0) at the limits of the practica
reactive power calculation
circuit diagram of 2 bit magnitude comparator
Need answers of a question bank of power electronics . It is an assignment. Urgent
Q. Draw the circuit of a two stage RC coupled amplifier?
Q. Consider two 1-C charges separated by 1 min free space. Show that the force exerted on each is about one million tons.
3) The impedance for a 120 km, 230-kV line is given as j 0.9 ohm/km and j 0.6 ohm/km for self and mutual terms respectively; resistance is neglected. The mho characteristic for the
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