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Q. Explain Read-only memory?
ROM is nonvolatile (because it maintains its contents even when its power is shut off) and is used to store data and programs that do not change during the operation of the system. The mask-programmed ROMs are read-only devices that are programmed for data storage during the manufacturing of the chip itself. These are generally less expensive devices for mass production. Character-font memory for laser printers is a good example. Programmable read-only memory (PROM) is a field-programmable memory that is fabricated by the manufacturer containing all 0s and is programmed irreversibly by the user by electrically changing appropriate 0s to 1s. PROMs are quite economical in small quantities. Erasable programmable read-only memory (EPROM) is nonvolatile and widely used in microprocessor systems for program storage. It can be erased by shining an ultraviolet light and reprogrammed if necessary. These are produced in lowtomoderate volumes.
Refer to Figure 100. Assume MKS units. Given: R1= 4, R2=14, R3= 9, I4= 8, I5= 7. Determine: Ieq, Req, and V3.
Define the XOR GATE - Microprocessor? The XOR GATE is a alike to an OR gate except for the instance when all the inputs are high. With a XOR gate when all the inputs are high t
Explain Soft magnetic materials. Soft magnetic materials -They contain small enclosed area of hysteresis loop, high permeability low eddy current losses and high saturation
Metering and Billing System Previously, you have learnt about various measures for reducing commercial losses of a utility. You have studied in which the metering and billing
Q. An n-channel JFET with A = 300 V, P = 2 V, and I DSS = 10 mA is to be operated in the active mode. Determine i D when v DS = 10 V and v GS =-0.5V.
Q. Explain the working principle of a TRIAC. "Triac" is an abbreviation for three terminal ac switch. 'Tri'-indicates that the device has three terminals and 'ac' indicates tha
Rise Time (t r ) During rise time voltage falls from 90% V a to 10% where V a where V a is the initial anode voltage. In terms of current time taken by anode curre
Q. For a parallel-plate capacitor with plates of area A m 2 and separation d m in air, the capacitance in farads may be computed from the approximate relation Compute the
A signal comprises a bandwidth of 1kHz centred around 1kHz. A sine wave along with a frequency of 1250Hz is added to the signal. The bandwidth of the new signal is: 2250Hz
Q. Adiodewith the i-v characteristic shown in Figure is used in series with a voltage source of 5 V (forward bias) and a load resistance of 1 k. (a) Determine the current and t
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