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Explain Memory Mapped I/O Scheme.
Memory Mapped I/O Scheme: In such scheme there is only one address space. These address space is defined as all possible addresses which microprocessor can produce. Some addresses are allocated to memories and several addresses to I/O devices. This I/O device is also functions as a memory location and one address is assigned to this. In this scheme all the data transfer instructions of the microprocessor can be utilized for both memory and also I/O device. This scheme is appropriate for a small system.
Semiconductor Equations The semiconductor equations that are relating these variables are shown below: Carrier density: n = n i exp (E FN - E i / KT) (1)
p type material: p type material is formed by doping aerial crystal with impurity atoms having three valance electrons. The diffused impurities with three valence electrons
Refer to Figure 100. Assume MKS units. Given: R1= 4, R2=14, R3= 9, I4= 8, I5= 7. Determine: Ieq, Req, and V3.
Explain the Procedure for design of Sequential Circuits? The design of the synchronous sequential circuit starts from a set of specifications and culminates in a logic diagram
1 Explain the advantages and disadvantages of optical fiber versus copper Medium of communication 2 Define multiplexing. Explain TDM 3 Describe the protocol architecture and
When the PLC is in the RUN mode it will switch ON the conveyer so it will run continuously. This project is divided into four outcomes: (a) Detect block on entry, close
Commercial Losses in Electrical Systems Commercial losses are caused by pilferage, theft, defective meters, and errors in meter reading and in estimating un-metered supply of
Q. Common-Emitter Configuration? The emitter part of a circuit being common to both the input and the output portions, Figure (a) illustrates a common-emitter (CE) BJT amplifie
Q. For a part of the network shown in Figure, given that i 1 = 4A; i 3 (t) = 5e -t , and i 4 (t) = 10 cos 2t, find v 1 , v 2 , v 3 , v 4 , i 2 , and i 5 .
Q. emf produced by windings? The time variation of emf for a single conductor corresponds to the spatial variation of air-gap flux density. By suitable winding design, the harm
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