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Explain mechanisms of propagation of radio communication.
Radio communication deals with electronic radiation of electromagnetic energy from one point to another through atmosphere or free space. It is possible only in a certain position ofelectromagnetic frequency spectrum. Currently, this portion includes frequencies from 9 kHz to 400 GHz.whereas there are international allocations for the radio spectrum up to 275 GHz, most of the commercial uses occur between 100 kHz and 20 GHz. Very few experimental systems have been operated beyond 100 GHz.
Different layers of atmosphere play a role in propagating radio waves. Atmosphere comprises four layers. Of the four layers, ionosphere and troposphere are useful for radio communication in certain frequency ranges. Many other radio frequencies pass straight through atmosphere and can be beamed towards satellites placed in interplanetary space
Q. A silicon npn BJT is biased by the method shown in Figure, with R E = 240 , R 2 = 3000 , and V CC = 24 V. The operating point corresponds to V BEQ = 0.8V, I BQ = 110 µA,
Using the LM741operational amplifier build a current amplifier with the voltage gain of |A V | = 300 v/v ± = 20% . Measure all necessary parameters of the amplifier (as per delive
Antenna Fundamentals We shall discuss here only the fundamental concepts needed to understand the role of an antenna as a power-coupling element of a system. Figure illustrates
Magnetic field due to an electric current Let a piece of wire be arranged to pass vertically by a horizontal sheet of cardboard, on which is placed few iron filings. If a curr
Q. What is Idss. What are the conditions for its maximum value? The term 'Idss' refers to saturation condition of the Drain current. From the above graph it's clear that as the
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brifly explain capacitance switching
Q. Consider an RL series circuit excited by (a) v(t) = 20e -2t V, and (b) v(t) = 20 V. Determine the forced component of the voltage across the inductor for R = 2 and L = 2H.
Q. Write a short note on heat sink For transistors handling small signals ,the power dissipated at the collector is small.Such transistors have little chances of thermal runawa
I need to do this experiment. Can anyone help me out doing this
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