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Ion implantation equipment typically having of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be entrenched. Each ion is typically a single atom, and thus the actual amount of material implanted in the target is the integral over time of the ion current.
typesofhardness
Planar defects * Grain boundaries occur where the crystallographic direction of the lattice abruptly changes. This usually happens when two crystals start growing separately an
what are the applications of radioactivity in engineering
The over all diffinition of stripping
what are the conversion rates of the different components in hemicellulose to simpler sugars(e.g xylan to xylose)
Bakelite is a material based on the thermosetting phenol formaldehyde resin. Produced by the reaction under heat and pressure of phenol (a toxic, colourless crystalline solid) and
A tank contains cold water at a temperature Tc = 20°C and volume Vc = 1 m3. You add a volume Vh = 1 m3 of water at temperature Th = 100°C at time t = 0. Energy is lost from the tan
For high speed of reading and storing the information's in a computer, the use is made of Ferrites.
The functions of the oxide layer are to: 1. mask against diffusion or ion-implant 2. passivate the surface electrically and chemically 3. isolate one device from another
what are pseudo order reaction?with suitable example?
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