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Ion implantation equipment typically having of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be entrenched. Each ion is typically a single atom, and thus the actual amount of material implanted in the target is the integral over time of the ion current.
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Two parallel planes 1.2x1.2 are splited by a distance of 1.2 m. the emissivity's of the planes are 0.4 and 0.6, and the temperature are 760 and 300 oC, correspondingly. A 1.2x1.2 r
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