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Ion implantation equipment typically having of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be entrenched. Each ion is typically a single atom, and thus the actual amount of material implanted in the target is the integral over time of the ion current.
in the combustion of heptane in oxygen CO2 was produced.if 500kg of dry ice was produced of which 50% of the CO2 was converted to dry ice,what is the amount of heptane needed to bu
Properties of good refractory material: The requirements of refractories for different furnaces and heating places depend on the working conditions. Nature of slag formed, maximum
The degree of freedom when ice water and water vapour coexist in equilibrium is zero
your favorite proffessor like mountain climbing
The aim of this assignment is to develop and test your ability to integrate your knowledge of plastic failure and fracture. Below is a plot that shows the plane strain fracture tou
whycoagulant is not used in hot lime soda proces
1. Select a process variable (pressure / temperature / level / flow) and conduct a literature survey to determine recent developments in process instrumentation field. Ide
how to reduce COD in primary process effluent treatment system
Planar defects * Grain boundaries occur where the crystallographic direction of the lattice abruptly changes. This usually happens when two crystals start growing separately an
Formulas for determining temporary and permanent hardness
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