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Ion implantation equipment typically having of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be entrenched. Each ion is typically a single atom, and thus the actual amount of material implanted in the target is the integral over time of the ion current.
Ionic bonding. An ionic bond (or electrovalent bond) is a type of chemical bond that can often form among metal and non-metal ions (or polyatomic ions like as ammonium) throug
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Oxidation - Silicon has the unique ability to be oxidized into silica, which produces a chemically stable, protective and insulating layer on the surface of the wafer. The produc
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A shell-and-tube Heat exchanger with one shell exceed and two tube passes si to be designed to condense 3900 kg/hr of steam at 1 atm. Steam may be suppose to enter the shell side a
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