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Ion implantation equipment typically having of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be entrenched. Each ion is typically a single atom, and thus the actual amount of material implanted in the target is the integral over time of the ion current.
Hi, my name is Luan Sousa, i am from Brazil and i am a chemical engineering student. I am developing a project of formox plant design and i would like to know about yields of conve
a mixture of propane (125 lbmole, K = 2.056), n-butane (200 lbmole, K = 0.925), and n-pentane (175 lbmole, K=0.520), is at 200 psia and 200 F. determine the phase of the mixture?
DEFINE INORGANIC CHEMISTRY
the inlet diameter of venturimeter 25mm and diameter of throat is 15mm.The coefficient of discharge for venturimeter is Cv=0.98.The height is found to be 5ml density of water is 10
Ask questAmmonia is a gas for which reliable analytical methods are available to determine its concentration in other gases. To measure flow in a natural gas pipeline, pure ammonia
limitation of its
design a falling film evaporator in detail
putting example of literature review
THRMODYNAMICS
Bakelite is a material based on the thermosetting phenol formaldehyde resin. Produced by the reaction under heat and pressure of phenol (a toxic, colourless crystalline solid) and
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