Explain common collector configuration, Electrical Engineering

Assignment Help:

Q. Explain common collector configuration?

It is called the common-collector configuration because (ignoring the power supply battery) both the signal source and the load share the collector lead as a common connection point:

1952_Explain common collector configuration.png

Since the emitter lead of a transistor is the one handling the most current (the sum of base and collector currents, since base and collector currents always mesh together to form the emitter current), it would be reasonable to presume that this amplifier will have a very large current gain .the current gain for a common-collector amplifier is quite large, larger than any other transistor amplifier configuration.

638_Explain common collector configuration1.png



conditions where the transistor is conducting. Cutoff occurs at input voltages below 0.7 volts, and saturation at input voltages in excess of battery (supply) voltage plus 0.7 volts. Because of this behavior, the common-collector amplifier circuit is also known as the voltage-follower or emitter-follower amplifier. This amplifier configuration has a voltage gain of slightly less than 1In the common-collector configuration, though, the load is situated in series with the emitter, and thus its current is equal to the emitter current. With the emitter carrying collector current and base current, the load in this type of amplifier has all the current of the collector running through it plus the input current of the base. This yields a current gain of ? plus 1:

2119_Explain common collector configuration2.png


Related Discussions:- Explain common collector configuration

Comparison of induction and dielectric heating , Comparison  of Induction ...

Comparison  of Induction and Dielectric Heating After  studying the induction and  dielectric  heating  followings  points  may consider for  comparison  between  induction an

Find the small-signal equivalent circuit parameters, Given that a BJT has β...

Given that a BJT has β = 60, an operating point defined by I CQ = 2.5 mA, and an Early voltage V A = 50 V. Find the small-signal equivalent circuit parameters g m , r o , and rπ.

Show the frequency response of rc coupled amplifier, Q. Show the Frequency ...

Q. Show the Frequency response of Rc Coupled Amplifier? 1. At low frequency i.e,less than 50 Hz reactance of Cc is going high hence same part of the signal will pass from one s

.#title.Simulation on Half wave rectifier using PSpice, How to plot output ...

How to plot output power Vs load resistor graph using PSpice softwaer for half wave rectifier circuit

Designing a switching system, Q. Demonstrate how finite state machine model...

Q. Demonstrate how finite state machine model helps in designing a switching system and give a typical illustration. Ans: Switching systemessentially belongs to class of fi

PLC Programming, FIG. 2 Car Park Simulation Consider the above diagram, FI...

FIG. 2 Car Park Simulation Consider the above diagram, FIGURE 2, of the car park. The object of this assignment is to write a program to operate the barriers to allow the cars in

Explain the construction of a mosfet, Explain the construction of a MOSFET....

Explain the construction of a MOSFET. Draw the symbols and diagrams of both P-channel and N-channel MOSFET. As JFET and MOSFET also have source, drain and gate. Its gate is ins

Telecommunication, Design a low noise amplifier using an Infineon RF transi...

Design a low noise amplifier using an Infineon RF transistor BFP640. The amplifier is to be used to amplify the L2 GPS signal and so the centre frequency is 1227MHz and bandwidth 4

Explain 8259 pin diagram, Explain 8259 Pin Diagram. The 8259A adds 8 ve...

Explain 8259 Pin Diagram. The 8259A adds 8 vectored priority encoded interrupts to the microprocessor. It can be expanded to 64 interrupt requests by using one master 8259A and

Electronics, The mobility of free electrons and holes for pure silicon are ...

The mobility of free electrons and holes for pure silicon are 0.13 and 0.05 m2/V-S respectively. Find the intrinsic conductivity for silicon. Assuming ni = 1.5x 1016/cm3 at room te

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd