Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Q. Explain about Junction FET?
The JFET is a three-terminal, voltage-controlled current device, whereas the BJT is principally a three-terminal, current-controlled current device. The advantages associated with JFETs are much higher input resistance (on the order of 107 to 1010 ), lower noise, easier fabrication, and in some cases even the ability to handle higher currents and powers. The disadvantages, on the other hand, are slower speeds in switching circuits and smaller bandwidth for a given gain in an amplifier.
Figure shows the n-channel JFET and the p-channel JFET along with their circuit symbols. The JFET, which is a three-terminal device, consists of a single junction embedded in a semiconductor sample.When the base semiconductor forming the channel is of a n-type material, the device is known as an n-channel JFET; otherwise it is a p-channel JFET when the channel is
formed of a p-type semiconductor. The functions of source, drain, and gate are analogous to the emitter, collector, and base of the BJT. The gate provides the means to control the flow of charges between source and drain.
a 49pf cap,a 50 uH inductor, and a 100 ohms resister are in parallel: what is the resonance freq? And what is the complex impedance vector at 100MHZ?
A 3-phase transmission line is 200km long. The line has a per phase series impedance of 0.25+j0.45 Φ/km and shunt admittance of j7.2ΦS/km. The line delivers 250MVA, at 0.6 lagging
Modern complex systems are normally constructed by interconnecting sub-units. Therefore the systems engineer is often not too concerned about the details of what is inside these
CRM Triangle The following diagram which is called as CRM Triangle. Strategy refers to the whole stand taken through the company. It could selected a defensive posture in t
Consider the RC circuit of Figure (a) with R = 2 ,C = 5F,and i(t) = I = 10 A (a dc current source). Find the expressions for the capacitor voltage vC(t) and the capacitor current
Considering the TTL NAND gate circuit of Figure, with one or more inputs low, show that the output will be high.
What is the difference between a zinc-blend and Si diamond lattice structure?
Using the optimized 6-311G(d,p) geometry determined in question 1, perform the following equivalent core calculations for any two inequivalent carbons of butadiene: (a) Equivale
Q. What do you understand by demagnetizing and cross magnetizing effects of armature reaction in a d.c. machine. Derive the expression for calculation of demagnetizing and cross
i am implementing a paper "on the chaotic behaviour of buck converter" a want to plot bifurcation diagram by using simulink blocks without using coding is it possible??
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd