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write a short notes on hardness
A JFET for which V A = 80 V, V P = 4 V, and I DSS = 10 mA has a quiescent drain current of 3 mA when used as a common-source amplifier for which R D = R SS = 1k and R L = 3k
The circuit is altered by replacing the capacitor, C1 with an inductor of 150mH and left with the switch in position (a) for a long time. At time t=0, the switch is moved from posi
Analogue Threshold switching a) Include a variable potential divider to the schematic diagram to control the transistor base voltage b) Include the potential divider compon
the forward resisitance of a semi conductor diode is 10 ohm, two such diodes used in full wave rectifier subjectto a sinusoidal voltage wave form. given by v(t)=308 , sin(100 pi t)
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There is a limitation on the size of data. Most Microprocessor does not maintain floating-point operations.
Design a low noise amplifier using an Infineon RF transistor BFP640. The amplifier is to be used to amplify the L2 GPS signal and so the centre frequency is 1227MHz and bandwidth 4
One battery having of three cells in series. External resistance is 5 Ω E.m.f each cell is 1.5V and internal resistance is 0.2?. Measure the current flow and draw the circuit.
What is XMS? XMS: The memory system is splits in three major parts as: system area, XMS (extended memory system) and TPA (transient program area). The kind of microprocessor in
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