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Compare memory mapped I/O with I/O mapped I/O. Memory Mapped I/O Scheme: In this type of scheme there is merely one address space. These address space is explained as all p
Q. Consider a BJT switch connected to the next stage, as shown in Figure, in which iout is likely to be negative when v out is high. Assume V CC = 5 V, R C = 1k, and the high r
In the circuit above, V1 is a dc supply which outputs 12V, R1 has a value of 100 Ω and C1 is 100µF. The switch has been left in the position shown for a long time such that there i
Q. A two-winding, single-phase transformer rated 3 kVA, 220:110 V, 60 Hz is connected as an autotransformer to transform a line input voltage of 330 V to a line output voltage of 1
Use of Capacitor in Technical Loss Reduction The use of capacitors to correct for poor power factor is a well-built and cost-effective means of reducing distribution system lo
#qConsider a point-to-point radio link between two highly directional antennas in a stationary environment. The antennas have antenna gains of 30 dB, distance attenuation is 150 dB
Q. Find the parameter values V T and I DSS for a p- channel MOSFET with i D = 0 when v GS ≤-3 V, and i D = 5 mA when v GS = v DS =-8V.You may neglect the effect of v DS on
Explain the hysteresis loop of a magnetic material. Hystereses loop-Below the Curie temperature all-ferromagnetic materials show the identified hysteresis in the B (i.e. flux
Applications of Semiconductors Integrated circuits (ICs) SSI, MSI, LSI, and VLSI. Fluorescent materials used in TV screens II-VI (ZnS). Light detectors InSb, CdSe, Pb
High Voltage Distribution System or HVDS Adoption of HVDS (High Voltage Distribution System) through converting existing LVDS to HVDS reduces the technical losses appreciably.
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