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Consider a CS JFET amplifier with the following parameters : R1 = 350 k; R2 = 100 k, RSS = 1200 , RD = 900 , RL = 1000 , RS = 2000 , ro = 15 k,gm = 6 × 10-3 S,Cgs = 3 pF, Cgd = 1 pF, and ωL = 2π × 100 rad/s. Discuss the low- and high-frequency designs.
Switching Characteristics Switching characteristics of BJT are shown in figure. Due to the presence of internal capacitances BJT cannot be turned instantly. Initially
Q. For the logic circuit of Figure, construct a truth table and obtain the minimum SOP expression.
The block diagram for a 3-bit ripple counter is shown in Figure (a). Obtain a state table for the number of pulses N = 0 to 8, and draw a state diagram to explain its operation.
Explain the AND GATES - Microprocessor? The AND GATE has a logic 1 or high output if the entire inputs are high. The boolean and symbol expression for a 3-input AND gate is sho
Q. Show the Enhancement operation of p-channel enhancement mosfet? As the gate terminal is insulated from the channel by the silicon dioxide layer, we can also apply a negative
High-pass T filters: Three-element filters can comprise a 'T' or 'π' topology and in either geometries, a low-pass, band-pass, high-pass, or band-stop characteristic is feasib
The project involves comparisons between di erent sampling methods, di erent estimation methods, numerical results using samples selected from a synthetic nite population, and a
Data analysis in GIS: Therefore, GIS consists of the following: 1. Database - for storage and retrieval of information. The database forms the foundation of the GIS syst
Q. Applications of operational amplifiers? An op amp along with a few external components (resistors and capacitors) is capable of performing many different operations-hence th
Q. The parameters of a BJT are given by α = 0.98, I CBO = 90 nA, and i C = 7.5 mA. Find β, iB, and iE.
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