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Q. For a transistor, when v GS = -2.0 V, find V DSsat if Vp= -4.0 V for an n-channel depletion mode MOSFET. Solution: V p = -(V DSsat + v SG ) but v SG = -v GS = -(-
Q. How does a MOSFET amplify electrical signals? While a minimum requirement for amplification of electrical signals is power gain, one finds that a device with both voltage an
Q. What do you mean by Resistance? An ideal resistor is a circuit element with the property that the current through it is linearly proportional to the potential difference acr
Q. A practical voltage source is represented by an ideal voltage source of 30 V along with a series internal source resistance of 1.2 . Compute the smallest load resistance that c
Q. Draw the various characterstics of a DC shunt generator and explain critical resistance. Sol. Following are three most important characterstics or curves of a d.
charges of +2q and -4q are fixed a distance d apart as in figure_2(a).find electric field at the point A ,B and C (b) sketch roughly the electric field lines.
Trap is called as Non-Maskable interrupts, which is used in emergency condition.
The relationship between cell and batteries Generally, a cell delivers a certain voltage that is a function of what chemical reactions are taking place to generate the voltage
Q. In a 110V compound generator, the armature, shunt and series winding resistance are 0.06?, 25? and 0.04? respectively. The load consists of 200 lamps each rated 55W, 110V conn
Mode 1 ( 0 By applying a positive output pulse of the pulse width modulator to the transistor Q 1 it gets turned on. An input current in flows through V in Q 1
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