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Q. For the mechanical spring-mass-friction system shown in Figure, the differential equation relating the force F(t) and the velocity u(t) is given by
where M is themass,Dis the friction, and Cm is the compliance (reciprocal of stiffness) of the spring. For M = 20 kg, D = 4 kg/s, and Cm = 8 N/m,
develop an electric equivalent network (a) using the force-current analog, and (b) using the force- voltage analog, and find u(t) for F(t) = 40e-t/4 N.
Define the application of CAM/CAD to engineering design along with its benefits. a) A triangle is prepared by three position vectors A[2 4 1], B[4 6 1], C[2 6 1], get the reflec
Q. Three identical single-phase transformers are to be connected to form a three-phase bank rated at 300 MVA, 230:34.5 kV. For the following configurations, determine the voltage,
Unconditional Return RET Instruction: This instruction is used to transfer the program sequence from subroutine to the calling program unconditionally. The instruction forma
In most real signal processing applications the measured signals can not be described by an analytical expression. In addition, by the Wold decomposition theorem a stationary signa
Q. JFET Common Drain Amplifier? The common drain FET amplifier is similar to the common collector configuration of the bipolar transistor. A general common drain JFET amplifier
SBI Subtract Immediate with Borrow Instruction This instruction is used to subtract 8 bit data and borrow from the accumulator. The result of the operation is stored
Q. (a) Consider a diode circuit with RC load as shown in Figure. With the switch closed at t = 0 and with the initial condition at t = 0 that vC = 0, obtain the functional forms of
Addition of trivalent impurity to a semiconductor creates many (A) Holes. (B) Free electrons. (C) Valance electrons. (D) Bound electrons. Ans: Addition o
Energy band: the energy band picture for Ii an- type, and Iii ap - type semiconductor Indicate the position for, the donor and acceptor levels. Sol.(a)
Question: a) Describe two mechanisms by which electrons can be excited from the valence band to the conduction band? b) Given that the direct-band gap energy for Gallium N
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