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An abrupt silicon (ni = 1010 cm-3) p-n junction consists of a p-type region containing 1016 cm-3 acceptors and an n-type region containing 5 x 1016 cm-3 donors.
a). Show the energy diagram of a pn junction at thermal equilibrium.
b). Determine the built-in potential of this p-n junction.
c). Determine the total width of the depletion region if the applied voltage, V, equals 0, 0.5 and -2.5 V.
d). Derive an expression for the maximum electric field, in terms of the depletion zone width, built in potential and applied voltage using full depletion approximation, and then determine the maximum electric field in the depletion region at zero bias.
(a) In the so-called folded binary code of 4 bits, the left most digit represents the sign of an analog signal's quantized samples (with 0 for negative and 1 for positive), and the
electrical project produse eneargy desingn
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