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Q. A silicon npn BJT is biased by the method shown in Figure, with RE = 240 , R2 = 3000 , and VCC = 24 V. The operating point corresponds to VBEQ = 0.8V, IBQ = 110 µA, VCEQ = 14 V, and ICQ = 11 mA. Determine RC and R1.
RE should be made large enough to swamp out rB/ B. how does making RE large saturate the transistor b
Explain explanatory notes on A/D conversion. The digital inventory is working a revolution into the field of microcontrollers, technology and microprocessors are used more effi
Design 2-bit bidirectional shift register? ## A list of ten 8-bit numbers is located at address $5000. Write a 68000 Assembly program (flowchart and code) to sort those numbe
The paper should be written in the format of a paper to be submitted to a conference (IEEE). There should be a minimum of three journal paper references. The topic should be a disc
how to design colpitts oscillator?
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find E*(s) for E(s)=1-e/s(s+1)
Assuming that the receiver sends a XOFF signal when the receive buffer is P% full in order to avoid any data or packet loss.
Q. A four-pole dc generator is lap wound with 326 armature conductors. It runs at 650 r/min on full load, with an induced voltage of 252 V. If the bore of themachine is 42 cmin dia
Cointruct and simulate using multisim software a series voltage regulator to supply 1A to a load at a constant voltage of 9V. The supply voltage to regulator is 15V±10%. The minimu
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