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Q. Define Memory For a digital computer?
For a digital computer which stores both programs and data, memory can be divided into three types: random-access memory, mass storage, and archival storage. Random-access memory includes read-and-write memory (RAM), read-only memory (ROM), programmable read-only memory (PROM), and erasable programmable read-only memory (EPROM), in which any memory location can be accessed in about the same time. The time required to access data in a mass-storage device is relative to its location in the device. Mass storage, such as magnetic disk memory, has a relatively large storage capacity and is lower in cost per bit than random access memory. Archival storage, such as magnetic tape, is long-term storage with a very large capacity, but with a very slow access time, and may need user intervention for access by the system.
i need to submit a still model or a working model on science day(28 February). can you help me....
Q. Illustrate Electric Potential and Voltage? When electrical forces act on a particle, it will possess potential energy. In order to describe the potential energy that a parti
how a combination clipper works?
Current ratio The ratio is mainly used to give an idea of the company's ability to pay back its short-term liabilities with its short-term assets. The higher the current ratio
20 cells with emf 1.45V and internal resistance 0.5Ω for each cells is linked 4 rows which every rows having of 5 cells in series. Load resistance 15Ω is connected to the battery.
charges of +2q and -4q are fixed a distance d apart as in figure_2(a).find electric field at the point A ,B and C (b) sketch roughly the electric field lines.
Q. Assuming the diode to obey I = IS (e V/0.026 -1), calculate the ratio V/I for an ideal diode with I S = 10 -13 A for the applied voltages of -2,-0.5, 0.3, 0.5, 0.7, 1.0, and
Metal-Oxide-Semiconductor Structure A traditional metal-oxide-semiconductor abbreviated as MOS structure is acquired by growing a layer of silicon dioxide (SiO 2 ) on top of
Q. The coil is placed so that its axis of revolution is perpendicular to a uniform field, as shown in Figure If the flux per pole is 0.02 Wb, and the coil, consisting of 2 turns, i
Determine the change in IC from 25ºC to 175ºC for the transistor defined in this table for fixed-bias with RB = 240 k and = 100 due to the S(VBE) stability factor.
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