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i) Calculate the eigenvalues of a 100 hp, 1150 rpm dc machine at rated flux with no extra load inertia. Use the "hot" value of the armature resistance. Calculate estimates of the resulting speed overshoot and settling time (within 2%) for a step armature voltage input, beginning at an initial current of 0.
ii) Now assume that a closed-loop current regulator is introduced as shown in Fig. 2.7-3 of the book. What are the new eigenvalues of the motor-plus-regulator system if the current regulator gain Ki is set to 10? Ignore the mechanical damping constant (B=0) in Fig. 2.7-3. Calculate estimates of the resulting overshoot and settling time for a step current input, beginning at an initial current of 0.
iii) Now consider a closed-loop speed control system as shown in Fig. 2.7-5. Assume that the current regulator dynamics are very fast compared to the outer speed loop and the current regulator gain is high enough so that it is effectively "ideal". Calculate the eigenvalue of this closed-loop system for Kp=100, τz=∞. (Assume B=D=0 again.) Calculate the resulting output speed overshoot and approximate settling time of the closed-loop system for a step speed command input.
Write a computer program to implement the finite difference method. The program can be in any computer language that is available within the school. Set up the code to find the pot
Q. Briefly explain about Wye-delta transformation? Certain network configurations cannot be reduced or simplified by series-parallel combinations alone. In some such cases wye-
Revision of Basics Although it is assumed in this book that the reader has enough knowledge of various number systems ( binary, octal and hexadecimal and their relation
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Role of Central and State Governments The subsequent roles of Central and State Governments are envisaged in the Act: The Central Government will Notify rules
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a. Simulate a diode application circuit using Multisim EWB. Compare calculated and simulated results Each student must choose one of the following circuits from question 1 (Ref
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Q. For an n-channel JFET with V A = 350 V, I DSS = 10 mA, and V P = 3V, find V DS that will cause i D = 11 mA when v GS = 0.
when i/p voltg is grater than battery diode is clse or open
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