Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Carbides
Carbides of titanium, zirconium, boron and silicon are significant refractory materials. Though, the carbides have extremely high melting points so they lack oxidation resistance.
Carborundum, a well identified abrasive material is silicon carbide or SiC. Such material has extremely high hardness, high thermal conductivity, extremely high refractoriness, and has semi-conducting nature. Silicon Carbide's electrical conductivity is low at low temperature but raises by order of magnitude at high temperatures. When 60 percent sand and 40 percent coke along with some saw salt and dust and heated in an electric arc furnace at a temperature of about 1425oC, the resulting product is Silicon Carbide. The SiC removed from the furnace is a mass of interlocking crystals. Several shapes may be acquired when SiC is ground, mixed along with binding agent, fixed and shaped. The most widely and oldest utilized is the clay bonded material. Within this material refractory clay is added as the bonding agent. The bond in such combination softens at 1200-1500oC. Silicon and silicon nitride, are other binding materials. Silicon bonded Silicon Carbide also has its employ limited to a temperature below 1500oC due to loss in bond strength. Silicon nitride bonded SiC, though, retains its strength at great higher temperature and shows also much better shock resistance. Though a monoxide, a layer of SiO2 is formed on SiC. Such oxide layer protects SiC from more oxidation. Adding of 0.5 to 1% B throughout sintering helps uniform structure and imparts stability. SiC fibres have been utilized as reinforcement in metal and ceramics. Reaction bonded SiC is made via two distinct processes. In one procedure a compact of SiC, an organic and carbon binder is infiltrated via liquid Si that bonds the particles by formation of additional SiC. The free Si might be leached out along with acid to leave an open porous refractory. Thin walled coating or components of SiC is produced via decomposition of gas mixture containing both Silicon and C on a heated substrate. The fuel elements of high temperature gas cooled elements are produced via this process. Recently slip casting has also been utilized for silicon carbides. It has resulted in products of superior refractoriness, density, abrasion resistance and high strength, and good chemical resistance also. Silicon carbide refractories are characterized via low thermal expansion and high thermal conductivity. They tend to oxidize gradually in air at a temperature range of 900-1300oC.
Q. Vessels resting on concrete foundations? For vessels resting on concrete foundations, the allowable concrete bearing stress shall be 750 psi (5 MPa). The design loadings fo
Problems to improve the deficirncies of IGES Within the framework of this interface, an attempt was to be made to improve the deficiencies of IGES, SET and VDAFS which have the
Features of the Schem: Features of the scheme are as follows : DIC is the primary registering centre. Registration is voluntary and not compulsory. Two types of
What are types of raft foundation? Define according to rigid mat deign. One of the common types of raft foundation is the flat concrete slab 0.75 to 2.00 m thick with a two way
Explain construction and working of Belt transmission type Dynamometer?
Resultant of coplanar concurrent force system: The resultant force, of given system of forces can be found out by the resolution method, which is discussed below: Assume th
a)What are methods used in rating for time study. Illustrate them. b) Write down principles of motion economy.
Find modulus of elasticity of the composite under isostrain: A composite is made of alternate layers of 60% E-glass and 40% epoxy resin. If modulii of elasticity of E-glass an
For two waves period, determine the time response x(t) for the system (ignoring viscous damping effect only) Give=n: X0=0.09615 , θ(radians)=0.110*π , μk=0.80000 , μs=0.90000 , K=
ES 347 - Thermodynamics Project Assigned: 3/28/2013 Due: 4/25/2013 Problem specification 5 kg of air is contained in a piston-cylinder device, initially at a pressure of 2MPa and a
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd