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Aggregate properties 1.Aim: To compare the bulk density, voids ratio and angularity number of a nominal single sized aggregate when subjected to different levels of compaction
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FIELD EFFECT TRANSISTORS (FET) A field-effect transistor (FET) is a semiconductor device in which the current flowing through a conduction channel i.e. between two terminals ca
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Comparison of FP result with experiment At the lowest test lift coefficient the flow is just subcritical (in the sense that the Mach number of the flow component normal to the
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