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Question:
a) Describe two mechanisms by which electrons can be excited from the valence band to the conduction band?
b) Given that the direct-band gap energy for Gallium Nitride (GaN) is 3.4 eV at room temperature, calculate the phonon energy and phonon momentum that you can expect from such a material with a lattice constant of 3.186 Å and velocity of sound of 5x103 m/s.
c) Given a P-type semiconductor with NA and ND atom concentrations of 8x1011 cm-3 and 3x103 cm-3 respectively, calculate the electron concentration assuming ni = 1.4x1010 cm-3.
d) What do you understand by the Fermi Level of a crystal? According to the Fermi-Dirac function, what is the temperature at which there is 1% probability that a state, with an energy 0.5 eV above the Fermi energy, will be occupied by an electron?
e) Given a piece of N-type silicon at 0 ºC,
i. Calculate the thermal velocity of an electron with an effective mass of 1.18m0 and a mobility of 0.25 m2V-1s-1.
ii. What is the electric field that needs to be applied to make the electron drift at a velocity of 1000 ms-1?
What is the power of the signal transmitted by powerful cell phones? Ans) The powerful cell phones can transfer a signal of 3 watts.
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If a compressor in a system can change a message crest factor from 3.2 to 2, while maintaining its peak amplitude constant, find the decibels of improvement in signal-to-noise rati
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