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Question:
a) Describe two mechanisms by which electrons can be excited from the valence band to the conduction band?
b) Given that the direct-band gap energy for Gallium Nitride (GaN) is 3.4 eV at room temperature, calculate the phonon energy and phonon momentum that you can expect from such a material with a lattice constant of 3.186 Å and velocity of sound of 5x103 m/s.
c) Given a P-type semiconductor with NA and ND atom concentrations of 8x1011 cm-3 and 3x103 cm-3 respectively, calculate the electron concentration assuming ni = 1.4x1010 cm-3.
d) What do you understand by the Fermi Level of a crystal? According to the Fermi-Dirac function, what is the temperature at which there is 1% probability that a state, with an energy 0.5 eV above the Fermi energy, will be occupied by an electron?
e) Given a piece of N-type silicon at 0 ºC,
i. Calculate the thermal velocity of an electron with an effective mass of 1.18m0 and a mobility of 0.25 m2V-1s-1.
ii. What is the electric field that needs to be applied to make the electron drift at a velocity of 1000 ms-1?
Q. Show that any amplifier represented by the model of Figure of the text can also be represented by themore general hybridmodel of Figure. Evaluate the four parameters of the hybr
Power Distribution: - The Energy Conservation Act, 2001, gives the legal framework, institutional arrangement and a regulatory mechanism at the Central and State level to emba
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