Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
A 3-phase, wye-connected, 11.8 kV, 100 MVA turbo- generator of 0.8 power factor lagging has a synchronous reactance of 2.0 p.u. on rating. The generator is driven by a steam turbine delivering a maximum power of 90MW. It is known that the fielf current limit in a (P,Q) plane can be represented in terms of the line-to-line voltages and 3-phase powers as:
Where Emax and Pmax are the maximum induced voltage (e.m.f.) and real power respectively. Assume the generator to be ideal for convenience of analysis.
A. Sketch the capability curve clearly indicating the characteristic operating limits.
B. What is the maximum reactive power the generator can produce?
C. Can this generator supply 70 MW at 0.7 power factor lagging? Explain your answer.
Assembly Language Programming In this chapter we will discuss programming in assembly language and machine language. The difference in machine assembly and high
Explain priority interrupts of 8085. The 8085 microprocessor has five interrupt inputs. They are TRAP, RST .5, RST 6.5, RST 5.5, and INTR. These interrupts have a fixed prio
what is tunneling effect ? With calculation.
Nodal analysis procedure: 1. Verify the number of common nodes and reference node within the network. 2. Assign current and its direction to every distinct branch of the n
Q. How many 500-page books can be stored on a 2400-ft, 1600-BPI magnetic tape if a typewritten page contains about 2500 bytes?
Q. Explain about Dial Pulses? Dial pulsing (sometimes known as rotary dial pulsing) is the method basically used to transfer digits from a telephone set to the local switch. Pu
Electrostatic Potential
What are procedures? Procedures are a group of instructions stored as a separate program in memory and it is known from the main program whenever needed. The type of procedure
when i/p voltg is grater than battery diode is clse or open
Semiconductor Equations The semiconductor equations that are relating these variables are shown below: Carrier density: n = n i exp (E FN - E i / KT) (1)
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd